Effect of Top Electrode Materials on Switching Characteristics and Endurance Properties of Zinc Oxide Based RRAM Device

2020 ◽  
Vol 12 (1) ◽  
pp. 01007-1-01007-6
Author(s):  
Chandra Prakash Gupta ◽  
◽  
Praveen K. Jain ◽  
Umesh Chand ◽  
Shashi Kant Sharma ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electrode Materials ◽  
Switching Characteristics

Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films

2011 ◽  
Vol 47 (3) ◽  
pp. 633-636 ◽  
Author(s):  
Chun-Chieh Lin ◽  
Yi-Peng Chang ◽  
Chia-Cheng Ho ◽  
Yu-Shu Shen ◽  
Bi-Shiou Chiou
Keyword(s):  
Resistive Switching ◽  
Electrode Materials ◽  
Switching Characteristics

Resistive Switching Characteristics of Zinc Oxide Resistive RAM Doped with Nickel

2013 ◽  
Vol 52 (1) ◽  
pp. 1009-1014 ◽  
Author(s):  
S. Wenxiang ◽  
Z. Kailiang ◽  
W. Fang ◽  
S. Kuo ◽  
M. Yinping ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Resistive Ram ◽  
Switching Characteristics

Gallium-Doped Zinc Oxide Nanoparticle Thin Films as Transparent Electrode Materials with High Conductivity

2020 ◽  
Vol 3 (10) ◽  
pp. 9622-9632
Author(s):  
Yasutaka Nishi ◽  
Yuki Kasai ◽  
Ryoko Suzuki ◽  
Masaki Matsubara ◽  
Atsushi Muramatsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrode Materials ◽  
Transparent Electrode ◽  
High Conductivity ◽  
Zinc Oxide Nanoparticle ◽  
Oxide Nanoparticle

Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory

Vacuum ◽  
2019 ◽  
Vol 166 ◽  
pp. 226-230 ◽  
Author(s):  
Kai-Jhih Gan ◽  
Po-Tsun Liu ◽  
Sheng-Jie Lin ◽  
Dun-Bao Ruan ◽  
Ta-Chun Chien ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Indium Zinc Oxide ◽  
Switching Characteristics

Voltage Switch of Nano-Size Zinc Oxide Ceramic Defected Barium

2010 ◽  
Vol 307 ◽  
pp. 21-26 ◽  
Author(s):  
M. El-Hofy ◽  
A.H. Salama
Keyword(s):  
Zinc Oxide ◽  
Chemical Composition ◽  
Oxide Ceramic ◽  
Switching Voltage ◽  
Grain Sizes ◽  
Two Samples ◽  
Switching Characteristics ◽  
Co Precipitation ◽  
Nano Size ◽  
Voltage Switching

Two samples of ZnO doped Ba with the chemical composition, 97ZnO-3BaO, have been prepared via oxalate co-precipitation. During precipitation the first sample, A, was stirred by magnetic stirrer while the second sample, B, was stirred via 40KHz ultrasonic wave. The obtained powders were decomposed at 400°C for 3h, then pressed and sintered at 1200°C for 1.5h. Then XRD, SEM and J-E measurements were performed and analysed. The grain sizes of the obtained ceramics were (0.5-2.26) µm and (80-119) nm for samples A and B, respectively. The J-E measurements revealed that the obtained ceramic has voltage switching characteristics, and that the switching voltage could be controlled by the stirring process.

Thermal Stability of Aluminum Doped Zinc Oxide Thin Films

2011 ◽  
Vol 685 ◽  
pp. 147-151 ◽  
Author(s):  
Jin Hua Huang ◽  
Rui Qin Tan ◽  
Jia Li ◽  
Yu Long Zhang ◽  
Ye Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Electrode Materials ◽  
Thin Film Solar Cells ◽  
Oxide Thin Films ◽  
Aluminum Doped Zinc Oxide ◽  
Thermal Stability Of

Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.

Aluminum-Doped Zinc Oxide as Transparent Electrode Materials

2011 ◽  
Vol 685 ◽  
pp. 6-12 ◽  
Author(s):  
Yu Long Zhang ◽  
Xian Peng Zhang ◽  
Rui Qin Tan ◽  
Ye Yang ◽  
Jun Hua Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Electrode Materials ◽  
Sol Gel ◽  
Argon Plasma ◽  
Transparent Electrode ◽  
Zno Thin Films ◽  
Zno Films ◽  
Doped Zno

Pristine and Al-doped zinc oxide nanopowders were synthesized via a surfactant-assisted complex sol-gel method, possessing a pure ZnO phase structure and controllable grain size which was characterized by X-ray diffraction and scanning electron microscopy. Using these nanopowders, the pristine and Al-doped ZnO magnetron sputtering targets were prepared following a mold-press, cold isostatical-press and schedule sintering temperature procedure. The relative density of these as-prepared targets was tested by Archimedes’ method on densitometer. All of the results were above 95 theory density percents, and the resistivity was tested on four-probe system at a magnitude of 10-2Ω cm. Related pristine ZnO thin films and Al-doped ZnO thin films were fabricated by magnetron sputtering method, respectively. The pristine and Al-doped ZnO films deposited on the quartz glass by dc sputtering owned a (002) orientation with a thickness of 350 nm at a deposition power of 100 W for two hours under an argon plasma. A good optical transparency above 80% and low resistivity of 1.60×10-3Ω cm were obtained with a deposition temperature of 573 K. The optical energy bandgap could be tailored by Al doping at 4 at.% Al.

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