Concerning contact resistance prediction based on time sequence and distribution character

2004 ◽  
Author(s):  
Fang Yao ◽  
Zhigang Li ◽  
Wenhua Li ◽  
Kui Li
Keyword(s):  
Contact Resistance ◽  
Time Sequence ◽  
Distribution Character ◽  
Resistance Prediction

Multiscale Numerical Model for Contact Resistance Prediction in the Proton Exchange Membrane Fuel Cell

2017 ◽  
Vol 80 (8) ◽  
pp. 73-85 ◽  
Author(s):  
Diankai Qiu ◽  
Linfa Peng ◽  
Peiyun Yi ◽  
Xinmin Lai ◽  
Holger Janßen ◽  
...  
Keyword(s):  
Fuel Cell ◽  
Numerical Model ◽  
Contact Resistance ◽  
Proton Exchange Membrane ◽  
Proton Exchange ◽  
Resistance Prediction ◽  
Exchange Membrane

Dynamic Scanning Electron Microscopy of Small Particles

1975 ◽  
Vol 33 ◽  
pp. 280-281
Author(s):  
W. Krakow ◽  
W. C. Nixon
Keyword(s):  
Electron Microscopy ◽  
Low Noise ◽  
Time Sequence ◽  
Field Of View ◽  
Video Tape ◽  
Small Particles ◽  
Polystyrene Spheres ◽  
Field Distributions ◽  
Dynamic Scanning ◽  
Scanning Electron

The scanning electron microscope (SEM) can be run at television scanning rates and used with a video tape recorder to observe dynamic specimen changes. With a conventional tungsten source, a low noise TV image is obtained with a field of view sufficient to cover the area of the specimen to be recorded. Contrast and resolution considerations have been elucidated and many changing specimens have been studied at TV rates.To extend the work on measuring the magnitude of charge and field distributions of small particles in the SEM, we have investigated their motion and electrostatic interaction at TV rates. Fig. 1 shows a time sequence of polystyrene spheres on a conducting grating surface inclined to the microscope axis. In (la) there are four particles present in the field of view, while in (lb) a fifth particle has moved into view.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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