High speed electrostatic surface discharge between a charged thin film and a sphere electrode with or without a thin dielectric film on that

Author(s):  
T. Oda ◽  
Y. Sakai
2020 ◽  
Vol 41 (2) ◽  
pp. 160-168
Author(s):  
I. A. Rastegaev ◽  
I. I. Rastegaeva ◽  
D. L. Merson ◽  
V. A. Korotkov

2021 ◽  
Vol 13 (2) ◽  
pp. 1-9
Author(s):  
Xingrui Huang ◽  
Yang Liu ◽  
Zezheng Li ◽  
Huan Guan ◽  
Qingquan Wei ◽  
...  

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.


1990 ◽  
Vol 201 ◽  
Author(s):  
Djula Eres

AbstractThis paper discusses the use of supersonic jets of gaseous source molecules in thin film growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates.


Author(s):  
Tiago Sutili ◽  
Rafael C. Figueiredo ◽  
Napoleão S. Ribeiro ◽  
Cristiano M. Gallep ◽  
Evandro Conforti

Elem Sci Anth ◽  
2017 ◽  
Vol 5 ◽  
Author(s):  
Peter L. L. Walls ◽  
James C. Bird

The concentration of microbes and other particulates is frequently enriched in the droplets produced by bursting bubbles. As a bubble rises to the ocean surface, particulates in the bulk liquid can be transported to the sea surface microlayer by attaching to the bubble’s interface. When the bubble eventually ruptures, a fraction of these particulates is often ejected into the surroundings in film droplets with a particulate concentration that is higher than in the liquid from which they formed. The precise mechanisms responsible for this enrichment are unclear, yet such enrichment at the ocean surface influences important exchange processes with the atmosphere. Here we provide evidence that drainage, coupled with scavenging, is responsible for the enrichment. By simultaneously recording the drainage and rupture effects with high-speed and standard photography, we directly measured the particulate concentrations in the thin film of a bubble cap at the moment before it ruptures. We observed that the enrichment factor strongly depends on the film thickness at rupture, and developed a physical model, based on scavenging and drainage, that is consistent with our observations. We have also demonstrated that this model is quantitatively consistent with prior observations of film drop enrichment, indicating its potential for a broader range of applications in the study of the sea surface microlayer and related phenomena.


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