A Design of Dynamic Defective Pixel Correction for Image Sensor

Author(s):  
Liu Yongji ◽  
Yuan Xiaojun
Keyword(s):  
2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  

Author(s):  
Makoto Motoyoshi ◽  
Hirofumi Nakamura ◽  
Manabu Bonkohara ◽  
Mitsumasa Koyanagi
Keyword(s):  

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.


2020 ◽  
Vol 2020 (1) ◽  
pp. 91-95
Author(s):  
Philipp Backes ◽  
Jan Fröhlich

Non-regular sampling is a well-known method to avoid aliasing in digital images. However, the vast majority of single sensor cameras use regular organized color filter arrays (CFAs), that require an optical-lowpass filter (OLPF) and sophisticated demosaicing algorithms to suppress sampling errors. In this paper a variety of non-regular sampling patterns are evaluated, and a new universal demosaicing algorithm based on the frequency selective reconstruction is presented. By simulating such sensors it is shown that images acquired with non-regular CFAs and no OLPF can lead to a similar image quality compared to their filtered and regular sampled counterparts. The MATLAB source code and results are available at: http://github. com/PhilippBackes/dFSR


2018 ◽  
Vol 23 (6) ◽  
pp. 573-585
Author(s):  
D.A. Suponnikov ◽  
◽  
A.N. Putilin ◽  
E.A. Tatarinova ◽  
Z.G. Zhgunev ◽  
...  
Keyword(s):  

Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.


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