A 0.18 mum CMOS Low Power Ring VCO with 1 GHZ Tuning Range for 3-5 GHZ FM-UWB Applications

Author(s):  
Tian Tong ◽  
Zhong Wenhua ◽  
Jan Mikkelsen Hvolgaard ◽  
Torben Larsen
Author(s):  
Daniel Schrufer ◽  
Jurgen Rober ◽  
Artur Schwarzkopf ◽  
Thomas Rabenstein ◽  
Timo Mai ◽  
...  
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2007 ◽  
Vol 17 (6) ◽  
pp. 457-459 ◽  
Author(s):  
Vasanth Kakani ◽  
Fa Foster Dai ◽  
Richard C. Jaeger

Circuit World ◽  
2020 ◽  
Vol 46 (3) ◽  
pp. 193-202
Author(s):  
Hamidreza Ghanbari Khorram ◽  
Alireza Kokabi

Purpose Several ultra-low power and gigahertz current-starved voltage-controlled oscillator (CSVCO) circuits have been proposed and compared here. The presented structures are based on the three-stage hybrid circuit of the carbon nanotube field-effect transistors (CNTFETs) and low-power MOSFETs. The topologies exploit modified and compensated Schmitt trigger comparator parts to demonstrate better consumption power and frequency characteristics. The basic idea in the presented topologies is to compensate the Schmitt trigger comparator part of the basic CSVCO for achieving faster carrier mobility of the holes, reducing transistor leakage current and eliminating dummy transistors. Design/methodology/approach This study aims to propose and compare three different comparator-based VCOs that have been implemented using the CNTFETs. The considered circuits are shown to be capable of delivering the maximum 35 tuning frequency in the order of 1 GHz to 5 GHz. A major power thirsty part of the high-frequency ring VCOs is the Schmitt trigger stage. Here, several fast and low-power Schmitt trigger topologies are exploited to mitigate the dissipation power and enhance the oscillation frequency. Findings As a result of proposed modifications, more than one order of magnitude mitigation in the VCO power consumption with respect to the previously presented three-stage CSVCO is reported here. Thus, a VCO dissipation power of 3.5 µW at the frequency of 1.1 GHz and the tuning range of 26 per cent is observed for the well-established 32 nm technology and the supply voltage of 1 V. Such a low dissipation power is obtained around the operating frequency of the battery-powered cellular phones. In addition, using the p-carrier mobility compensation and enhancing the rise time of the Schmitt trigger part of the CSVCO, a maximum of 2.38 times higher oscillation frequency and 72 per cent wider tuning range with respect to Rahane and Kureshi (2017) are observed. Simultaneously, this topology exhibits an average of 20 per cent reduction in the power consumption. Originality/value Several new VCO topologies are presented here, and it is shown that they can significantly enhance the power dissipation of the GHz CSVCOs.


2008 ◽  
Vol 50 (9) ◽  
pp. 2320-2322 ◽  
Author(s):  
Chang‐Zhi Chen ◽  
Hao‐Yu Fang ◽  
Yo‐Sheng Lin ◽  
Chi‐Chen Chen

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 889
Author(s):  
Xiaoying Deng ◽  
Peiqi Tan

An ultra-low-power K-band LC-VCO (voltage-controlled oscillator) with a wide tuning range is proposed in this paper. Based on the current-reuse topology, a dynamic back-gate-biasing technique is utilized to reduce power consumption and increase tuning range. With this technique, small dimension cross-coupled pairs are allowed, reducing parasitic capacitors and power consumption. Implemented in SMIC 55 nm 1P7M CMOS process, the proposed VCO achieves a frequency tuning range of 19.1% from 22.2 GHz to 26.9 GHz, consuming only 1.9 mW–2.1 mW from 1.2 V supply and occupying a core area of 0.043 mm2. The phase noise ranges from −107.1 dBC/HZ to −101.9 dBc/Hz at 1 MHz offset over the whole tuning range, while the total harmonic distortion (THD) and output power achieve −40.6 dB and −2.9 dBm, respectively.


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