A micro-power 4.8 ppm/°C CMOS voltage reference circuit for linear drop out regulator used in RFID

Author(s):  
Shailesh Singh Chouhan ◽  
Kari Halonen
2013 ◽  
Vol 10 (4) ◽  
pp. 20120945-20120945 ◽  
Author(s):  
A. Sahafi ◽  
J. Sobhi ◽  
Z.D. Koozekanani

2014 ◽  
Vol 23 (08) ◽  
pp. 1450107 ◽  
Author(s):  
JUN-DA CHEN ◽  
CHENG-KAI YE

This paper presents an approach to the design of a high-precision CMOS voltage reference. The proposed circuit is designed for TSMC 0.35 μm standard CMOS process. We design the first-order temperature compensation bandgap voltage reference circuit. The proposed post-simulated circuit delivers an output voltage of 0.596 V and achieves the reported temperature coefficient (TC) of 3.96 ppm/°C within the temperature range from -60°C to 130°C when the supply voltage is 1.8 V. When simulated in a smaller temperature range from -40°C to 80°C, the circuit achieves the lowest reported TC of 2.09 ppm/°C. The reference current is 16.586 μA. This circuit provides good performances in a wide range of temperature with very small TC.


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