A Temperature and Supply Voltage Independent CMOS Voltage Reference Circuit

This paper presents an approach to the design of a high-precision CMOS voltage reference. The proposed circuit is designed for TSMC 0.35 μm standard CMOS process. We design the first-order temperature compensation bandgap voltage reference circuit. The proposed post-simulated circuit delivers an output voltage of 0.596 V and achieves the reported temperature coefficient (TC) of 3.96 ppm/°C within the temperature range from -60°C to 130°C when the supply voltage is 1.8 V. When simulated in a smaller temperature range from -40°C to 80°C, the circuit achieves the lowest reported TC of 2.09 ppm/°C. The reference current is 16.586 μA. This circuit provides good performances in a wide range of temperature with very small TC.

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A New No Op Amp Full CMOS Voltage Reference Circuit

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.519-520.1067 ◽

2014 ◽

Vol 519-520 ◽

pp. 1067-1070

Author(s):

Jian Ying Shi ◽

Hui Ya Li ◽

Yan Bin Xu

Keyword(s):

Power Consumption ◽

Temperature Coefficient ◽

Output Voltage ◽

Supply Voltage ◽

Absolute Temperature ◽

Voltage Reference ◽

Op Amp ◽

Reference Circuit ◽

Simulation Results ◽

Cmos Voltage Reference

A no op amp structure full CMOS reference voltage circuit is designed. The two currents which are proportional to absolute temperature (PTAT) and complementary to absolute temperature (CTAT) are added together to get the reference output voltage which is obtained through a resistance. The characteristics of the new circuit are simulated using 0.5 μm BSIM3V3 spice models in HSPICE. The simulation results show that the output voltage of the circuit is 997mV, the power consumption is 1.12mW, the temperature coefficient is 15.2 ppm/°C in the range from-30°C to 100°C at the supply voltage of 2V.

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Pico Watt sub-threshold CMOS voltage reference circuit

IEICE Electronics Express ◽

10.1587/elex.10.20120945 ◽

2013 ◽

Vol 10 (4) ◽

pp. 20120945-20120945 ◽

Cited By ~ 2

Author(s):

A. Sahafi ◽

J. Sobhi ◽

Z.D. Koozekanani

Keyword(s):

Voltage Reference ◽

Reference Circuit ◽

Cmos Voltage Reference

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A micro-power 4.8 ppm/°C CMOS voltage reference circuit for linear drop out regulator used in RFID

2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS) ◽

10.1109/icecs.2013.6815557 ◽

2013 ◽

Cited By ~ 2

Author(s):

Shailesh Singh Chouhan ◽

Kari Halonen

Keyword(s):

Drop Out ◽

Voltage Reference ◽

Micro Power ◽

Reference Circuit ◽

Cmos Voltage Reference

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A 1V, 240 nW, 7 ppm/°C, high PSRR CMOS voltage reference circuit with curvature-compensation

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667671 ◽

2010 ◽

Cited By ~ 1

Author(s):

Pengpeng Yuan ◽

Dongmei Li ◽

Xin Wang ◽

Liyuan Liu ◽

Chun Zhang ◽

...

Keyword(s):

Voltage Reference ◽

Reference Circuit ◽

Cmos Voltage Reference

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A Simple Subthreshold CMOS Voltage Reference Circuit With Channel- Length Modulation Compensation

IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing ◽

10.1109/tcsii.2006.881813 ◽

2006 ◽

Vol 53 (9) ◽

pp. 882-885 ◽

Cited By ~ 87

Author(s):

P.-H. Huang ◽

H. Lin ◽

Y.-T. Lin

Keyword(s):

Channel Length ◽

Voltage Reference ◽

Reference Circuit ◽

Subthreshold Cmos ◽

Cmos Voltage Reference

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CMOS Voltage Reference using a Self-Cascode Composite Transistor and a Schottky Diode

Electronics ◽

10.3390/electronics8111271 ◽

2019 ◽

Vol 8 (11) ◽

pp. 1271

Author(s):

Brito ◽

Colombo ◽

Moreno ◽

El-Sankary

Keyword(s):

Schottky Diode ◽

Supply Voltage ◽

Absolute Temperature ◽

Voltage Reference ◽

Silicon Area ◽

Circuit Topology ◽

Voltage Range ◽

Self Cascode ◽

Cmos Voltage Reference ◽

The Impact

This work presents an investigation of the temperature behavior of self-cascode composite transistors (SCCTs). Results supported by silicon measurements show that SCCTs can be used to generate a proportional to absolute temperature voltage or even a temperature-compensated voltage. Based on the achieved results, a new circuit topology of a resistorless voltage reference circuit using a Schottky diode is also presented. The circuit was fabricated in a 130 nm BiCMOS process and occupied a silicon area of 67.98 µm × 161.7 µm. The averaged value of the output voltage is 720.4 mV, and its averaged line regulation performance is 2.3 mV/V, calculated through 26 characterized chip samples. The averaged temperature coefficient (TC) obtained through five chip samples is 56 ppm/°C in a temperature range from −40 to 85°C. A trimming circuit is also included in the circuit topology to mitigate the impact of the fabrication process effects on its TC. The circuit operates with a supply voltage range from 1.1 to 2.5 V.

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A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.503.12 ◽

2012 ◽

Vol 503 ◽

pp. 12-17

Author(s):

Qiang Li ◽

Xiao Yun Tan ◽

Guan Shi Wang

Keyword(s):

Power Supply ◽

Supply Voltage ◽

Cmos Technology ◽

Bandgap Reference ◽

Voltage Reference ◽

Temperature Dependent ◽

Power Supply Voltage ◽

Gyroscope System ◽

Bandgap Voltage Reference ◽

Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

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