Research status of wafer level packaging for RF MEMS switches

Author(s):  
Wenchao Tian ◽  
Xing Wang ◽  
Jiahao Niu ◽  
Hao Cui ◽  
Yong Chen ◽  
...  
Author(s):  
David I. Forehand ◽  
Charles L. Goldsmith

Wafer-level micro-encapsulation is an innovative, low-cost, wafer-level packaging method for encapsulating RF MEMS switches. This zero-level packaging technique has demonstrated 0.04 dB package added insertion loss at 35 GHz. This article overviews the processes, measurements, and testing methods used for determining the integrity and performance of individual encapsulated RF MEMS packages.


Author(s):  
John Heck ◽  
Hanan Bar ◽  
Tsung-Kuan A. Chou ◽  
Quan Tran ◽  
Qing Ma ◽  
...  

This paper describes a unique method of encapsulating MEMS switches at the wafer level using a thin-film “microshell” lid and a novel micro-embossing, or “stamping” technique to seal the lid. After fabrication of the MEMS switch and subsequent formation of the microshell, the switches are released through gold tunnels that allow the penetration of a chemical etchant. In a controlled ambient, a “stamp” wafer is aligned to the device wafer, and the wafers are thermally compressed together. This process applies pressure across each tunnel to fuse the gold, thereby sealing the microshell packages. By sealing and passivating the switches at the wafer level, the wafers can be exposed to backend processing, packaging, and assembly steps such as dicing without damaging the sensitive MEMS devices. Furthermore, the size, cost, and complexity of the packaged system are significantly reduced compared to standard wafer bonding processes.


Author(s):  
Qun Wu ◽  
Xun-jun He ◽  
Bo-shi Jin ◽  
Ming-xin Song ◽  
Jing-hua Yin

Author(s):  
H.A.C. Tilmans ◽  
H. Ziad ◽  
H. Jansen ◽  
O. Di Monaco ◽  
A. Jourdain ◽  
...  

2010 ◽  
Vol 19 (3) ◽  
pp. 548-560 ◽  
Author(s):  
Roland Guerre ◽  
Ute Drechsler ◽  
Debabrata Bhattacharyya ◽  
Pekka Rantakari ◽  
Richard Stutz ◽  
...  

2017 ◽  
Vol 2017 (NOR) ◽  
pp. 1-4
Author(s):  
Selin Tolunay Wipf ◽  
Alexander Göritz ◽  
Matthias Wietstruck ◽  
Maurizio Cirillo ◽  
Christian Wipf ◽  
...  

Abstract In this paper, the effect of silicon (Si) cap packaging on the BiCMOS embedded RF-MEMS switch performance is studied. The RF-MEMS switches are designed and fabricated in a 0.25μm SiGe BiCMOS technology for K-band (18 – 27 GHz) applications. The packaging is done based on a wafer-to-wafer bonding technique and the RF-MEMS switches are electrically characterized before and after the Si cap packaging. The experimental data shows the effect of the wafer-level Si cap package on the C-V and S-parameter measurements. The performed 3D FEM simulations prove that the low resistive Si cap, specifically 1 Ω·cm, results in a significant RF performance degradation of the RF-MEMS switch in terms of insertion loss.


2005 ◽  
Author(s):  
David I. Forehand ◽  
Charles L. Goldsmith

2019 ◽  
Vol 28 (4) ◽  
pp. 724-731
Author(s):  
Ilker Comart ◽  
Cagri Cetintepe ◽  
Ebru Sagiroglu ◽  
Simsek Demir ◽  
Tayfun Akin

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