Effect of wafer-level silicon cap packaging on BiCMOS embedded RF-MEMS switch performance

2017 ◽  
Vol 2017 (NOR) ◽  
pp. 1-4
Author(s):  
Selin Tolunay Wipf ◽  
Alexander Göritz ◽  
Matthias Wietstruck ◽  
Maurizio Cirillo ◽  
Christian Wipf ◽  
...  
Keyword(s):  
Rf Mems ◽  
Wafer Level ◽  
3D Fem ◽  
Rf Mems Switch ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Bicmos Technology ◽  
Switch Performance ◽  
Rf Performance

Abstract In this paper, the effect of silicon (Si) cap packaging on the BiCMOS embedded RF-MEMS switch performance is studied. The RF-MEMS switches are designed and fabricated in a 0.25μm SiGe BiCMOS technology for K-band (18 – 27 GHz) applications. The packaging is done based on a wafer-to-wafer bonding technique and the RF-MEMS switches are electrically characterized before and after the Si cap packaging. The experimental data shows the effect of the wafer-level Si cap package on the C-V and S-parameter measurements. The performed 3D FEM simulations prove that the low resistive Si cap, specifically 1 Ω·cm, results in a significant RF performance degradation of the RF-MEMS switch in terms of insertion loss.

Analysis of Cycle Lifetimes and Failure Modes for RF MEMS Switches

2005 ◽  
Author(s):  
Chris Brown ◽  
Jacqueline Krim ◽  
Art Morris
Keyword(s):  
Failure Modes ◽  
Electrode Materials ◽  
Rf Mems ◽  
Operating Parameters ◽  
Rf Mems Switch ◽  
Testing Conditions ◽  
Mems Switches ◽  
Mems Switch ◽  
Contact Points ◽  
Rf Mems Switches

RF MEMS switch lifetimes are limited by stiction of the moving components and degradation of the metal to metal contact points during cycling. Currently, maximum switch lifetimes are around 10 to 25 billion cycles. Past experimentation has shown that some stiction problems can be overcome by carefully controlling the operating parameters, but problems at the contact points remain [1]. It is believed that by developing a set of tribological design rules which limit the factors leading to catastrophic failure, switches can operate in excess of 100 billion cycles. Recent research has quantified the reliability and durability of gold contact points on RF MEMS switches as a function of current [2]. Most experimentation on RF MEMS switches has focused on controlling the operating parameters such as current, voltage, electrode materials, contact area, switching mode and force; however, limited work has been performed on a single device type in multiple environmentally controlled testing conditions such as vacuum, cryogenic temperatures, etc. This presentation will discuss performance of the wiSpry RF MEMS switch focusing on quantification of device reliability and failure mechanisms under various atmospheric and temperature conditions. Environmental testing conditions include switching in open air, vacuum and inert gasses, in temperatures ranging from 294 K to 4 K.

A Stamp-Sealed Microshell Package for RF MEMS Switches

2007 ◽  
Author(s):  
John Heck ◽  
Hanan Bar ◽  
Tsung-Kuan A. Chou ◽  
Quan Tran ◽  
Qing Ma ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Rf Mems ◽  
Mems Devices ◽  
Wafer Level ◽  
Subsequent Formation ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Unique Method ◽  
Chemical Etchant

This paper describes a unique method of encapsulating MEMS switches at the wafer level using a thin-film “microshell” lid and a novel micro-embossing, or “stamping” technique to seal the lid. After fabrication of the MEMS switch and subsequent formation of the microshell, the switches are released through gold tunnels that allow the penetration of a chemical etchant. In a controlled ambient, a “stamp” wafer is aligned to the device wafer, and the wafers are thermally compressed together. This process applies pressure across each tunnel to fuse the gold, thereby sealing the microshell packages. By sealing and passivating the switches at the wafer level, the wafers can be exposed to backend processing, packaging, and assembly steps such as dicing without damaging the sensitive MEMS devices. Furthermore, the size, cost, and complexity of the packaged system are significantly reduced compared to standard wafer bonding processes.

Effect of wafer-level silicon cap packaging on BiCMOS embedded RF-MEMS switch performance

2017 ◽  
Author(s):  
Selin Tolunay Wipf ◽  
Alexander Goritz ◽  
Matthias Wietstruck ◽  
Maurizio Cirillo ◽  
Christian Wipf ◽  
...  
Keyword(s):  
Rf Mems ◽  
Wafer Level ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Switch Performance

The Oxygen Plasma Dry Release Process of the Membrane Bridge of RF MEMS Switches

2013 ◽  
Vol 562-565 ◽  
pp. 1238-1241
Author(s):  
Li Li Jiang ◽  
Shi Xing Jia ◽  
J. Zhu
Keyword(s):  
Oxygen Plasma ◽  
Rf Mems ◽  
Process Time ◽  
Bottom Surface ◽  
Release Process ◽  
Rf Mems Switch ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Dry Etch

In this paper the oxygen plasma dry release process for membrane-bridge RF MEMS switches is studied and several methods are used to improve the dry release process. The residual PR (Photoresist) on the device substrate after different process time are observed and measured in this paper. The measured data shows that the residual PR exponentially reduces with etch time. It is found that the residual PR on the bottom surface of the membrane bridge is more than that on the substrate. The completely released RF MEMS switch using oxygen plasma dry etch process is obtained.

Application of RF MEMS Switch for Reconfiguring Micromachined Antennas

2014 ◽  
Vol 704 ◽  
pp. 293-298
Author(s):  
Jija Rajmohan ◽  
M.R. Baiju
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switches ◽  
Wireless Applications ◽  
Mems Switch ◽  
Rf Components ◽  
Rf Mems Switches

For mobile and wireless applications where the size of the system has to be minimized, antenna and RF components are to be integrated on to the same substrate. The contradicting requirements of the substrate with respect to the antenna and the RF circuit can be resolved by using micromachined antennas. If the principle of reconfigurability is applied to the micromachined antenna, it increases the versatality of the system. This paper proposes reconfigurability of micromachined antennas using RF MEMS switches. In the case of micromachined antennas, which involve low voltage signals, RF MEMS switches with low actuation voltage are required for achieving reconfigurability. In this paper an RF MEMS capacitive switch operating at a low actuation voltage of 1 Volt is presented

Design and Fabrication of Wafer-Level Package for RF MEMS Switch Using BCB

2014 ◽  
pp. 473-474
Author(s):  
Renu Sharma ◽  
Isha Yadav ◽  
Anupriya Katiyar ◽  
Milap Singh ◽  
Shaveta ◽  
...  
Keyword(s):  
Rf Mems ◽  
Wafer Level ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Wafer Level Package

scholarly journals Performance Comparison Of Shunt Rf Mems Switches

2021 ◽  
Vol 12 (5) ◽  
pp. 596-606
Author(s):  
S Girish Gandhi, I Govardhani, M Venkata Narayana, K Sarat Kumar
Keyword(s):  
Comparative Study ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Switching Time ◽  
Performance Comparison ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
And Performance

This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB.

scholarly journals RF-MEMS switches with AlN dielectric and their applications

2011 ◽  
Vol 3 (5) ◽  
pp. 509-520 ◽  
Author(s):  
Montserrat Fernández-Bolaños Badía ◽  
Pierre Nicole ◽  
Adrian Mihai Ionescu
Keyword(s):  
Transmission Lines ◽  
Rf Mems ◽  
Beam Steering ◽  
Phase Shifters ◽  
Center Frequency ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Mems Technology ◽  
Bandwidth Tuning ◽  
Rf Performance

This paper reports on the potential of RF-MEMS technology based on aluminum nitride capacitive dielectric and nickel-suspended membranes to provide RF circuit functions in reconfigurable front-end radios. The RF performance of capacitive switches, distributed MEMS transmission lines (DMTLs) phase shifters for beam steering and tunable filters, including center frequency and bandwidth tuning of bandpass and band-stop filters are presented. Detailed characterization based on S-parameter data demonstrates very promising figures of merit of all fabricated demonstrators from 5 to 40 GHz.

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