Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices

2019 ◽  
Author(s):  
Yutao Cai ◽  
Yang Wang ◽  
Miao Cui ◽  
Wen Liu ◽  
Huiqing Wen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Semiconductor Devices ◽  
Passivation Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
High K

scholarly journals Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 95642-95649
Author(s):  
Yutao Cai ◽  
Yang Wang ◽  
Ye Liang ◽  
Yuanlei Zhang ◽  
Wen Liu ◽  
...  
Keyword(s):  
High Voltage ◽  
Semiconductor Devices ◽  
Passivation Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
High K

Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

2007 ◽  
Vol 91 (15) ◽  
pp. 153508 ◽  
Author(s):  
Lijuan Wang ◽  
Guojun Liu ◽  
Haibo Wang ◽  
De Song ◽  
Bo Yu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

2012 ◽  
Vol 29 (5) ◽  
pp. 057702 ◽  
Author(s):  
Yue-Chan Kong ◽  
Fang-Shi Xue ◽  
Jian-Jun Zhou ◽  
Liang Li ◽  
Chen Chen ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Heterostructure ◽  
High K ◽  
High K Dielectric
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