A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

Chinese Physics Letters ◽

10.1088/0256-307x/29/5/057702 ◽

2012 ◽

Vol 29 (5) ◽

pp. 057702 ◽

Author(s):

Yue-Chan Kong ◽

Fang-Shi Xue ◽

Jian-Jun Zhou ◽

Liang Li ◽

Chen Chen ◽

...

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

High K ◽

High K Dielectric

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Peculiarities of electrical properties of metal-insulator-semiconductor capacitors based on high-k dielectric stack containing HfTiSiO:N and HfTiO:N films

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897569 ◽

2009 ◽

Author(s):

V. Mikhelashvili ◽

P. Thangadurai ◽

W. D. Kaplan ◽

G. Eisenstein

Keyword(s):

Electrical Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

High K Dielectric

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Comparative Study of Flatband Voltage Transients on High-k Dielectric-Based Metal–Insulator–Semiconductor Capacitors

Journal of The Electrochemical Society ◽

10.1149/1.2975828 ◽

2008 ◽

Vol 155 (11) ◽

pp. G241 ◽

Author(s):

S. Dueñas ◽

H. Castán ◽

H. García ◽

A. Gómez ◽

L. Bailón ◽

...

Keyword(s):

Comparative Study ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

Flatband Voltage ◽

Voltage Transients ◽

High K Dielectric

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The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

Microelectronics Reliability ◽

10.1016/j.microrel.2009.04.003 ◽

2009 ◽

Vol 49 (7) ◽

pp. 716-720 ◽

Author(s):

P. Thangadurai ◽

W.D. Kaplan ◽

V. Mikhelashvili ◽

G. Eisenstein

Keyword(s):

Electron Beam ◽

Electron Beam Irradiation ◽

Electrical Characteristics ◽

Beam Irradiation ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

High K Dielectric

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GaAs high-k dielectric metal-insulator-semiconductor structure having silicon interface control layer

physica status solidi (c) ◽

10.1002/pssc.200779208 ◽

2008 ◽

Vol 5 (9) ◽

pp. 2729-2732 ◽

Author(s):

M. Akazawa ◽

H. Hasegawa

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Interface Control ◽

High K ◽

High K Dielectric ◽

Silicon Interface ◽

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Nb2O5 high-k dielectric enabled electric field engineering of β-Ga2O3 metal–insulator–semiconductor (MIS) diode

Journal of Applied Physics ◽

10.1063/5.0075627 ◽

2021 ◽

Vol 130 (24) ◽

pp. 245701

Author(s):

Prabhans Tiwari ◽

Jayeeta Biswas ◽

Chandan Joishi ◽

Saurabh Lodha

Keyword(s):

Electric Field ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

High K Dielectric ◽

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices

2019 International Conference on IC Design and Technology (ICICDT) ◽

10.1109/icicdt.2019.8790844 ◽

2019 ◽

Author(s):

Yutao Cai ◽

Yang Wang ◽

Miao Cui ◽

Wen Liu ◽

Huiqing Wen ◽

...

Keyword(s):

Electrical Properties ◽

Semiconductor Devices ◽

Passivation Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

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Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Thin Solid Films ◽

10.1016/j.tsf.2013.03.045 ◽

2013 ◽

Vol 536 ◽

pp. 68-73 ◽

Author(s):

A. Abrutis ◽

M. Lukosius ◽

M. Skapas ◽

S. Stanionyte ◽

V. Kubilius ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Insulator ◽

High K ◽

Metal Insulator Metal ◽

Metal Organic ◽

Organic Precursors ◽

High K Dielectric ◽

Organic Chemical Vapor Deposition

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Dynamic C-V and G-V characteristics of metal-insulator-semiconductor capacitor with Au nanocrystals and high-K tunneling layer

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422495 ◽

2007 ◽

Author(s):

K. H. Chiang ◽

H. C. Wu ◽

P. S. Chen ◽

C. H. Kuan ◽

C. S. Tsai

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

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WITHDRAWN: Tailored cerium-aluminate high-k dielectric thin films for metal–insulator–metal device applications

Thin Solid Films ◽

10.1016/j.tsf.2009.12.008 ◽

2009 ◽

Author(s):

Rakesh Sohal ◽

Grzegorz Lupina ◽

Peter Zaumseil ◽

Thomas Schroeder

Keyword(s):

Metal Insulator ◽

Dielectric Thin Films ◽

High K ◽

Metal Insulator Metal ◽

Device Applications ◽

High K Dielectric

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