Peculiarities of electrical properties of metal-insulator-semiconductor capacitors based on high-k dielectric stack containing HfTiSiO:N and HfTiO:N films

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897569 ◽

2009 ◽

Author(s):

V. Mikhelashvili ◽

P. Thangadurai ◽

W. D. Kaplan ◽

G. Eisenstein

Keyword(s):

Electrical Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

High K Dielectric

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A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

Chinese Physics Letters ◽

10.1088/0256-307x/29/5/057702 ◽

2012 ◽

Vol 29 (5) ◽

pp. 057702 ◽

Author(s):

Yue-Chan Kong ◽

Fang-Shi Xue ◽

Jian-Jun Zhou ◽

Liang Li ◽

Chen Chen ◽

...

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

High K ◽

High K Dielectric

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Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices

2019 International Conference on IC Design and Technology (ICICDT) ◽

10.1109/icicdt.2019.8790844 ◽

2019 ◽

Author(s):

Yutao Cai ◽

Yang Wang ◽

Miao Cui ◽

Wen Liu ◽

Huiqing Wen ◽

...

Keyword(s):

Electrical Properties ◽

Semiconductor Devices ◽

Passivation Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

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Comparative Study of Flatband Voltage Transients on High-k Dielectric-Based Metal–Insulator–Semiconductor Capacitors

Journal of The Electrochemical Society ◽

10.1149/1.2975828 ◽

2008 ◽

Vol 155 (11) ◽

pp. G241 ◽

Author(s):

S. Dueñas ◽

H. Castán ◽

H. García ◽

A. Gómez ◽

L. Bailón ◽

...

Keyword(s):

Comparative Study ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

Flatband Voltage ◽

Voltage Transients ◽

High K Dielectric

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The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

Microelectronics Reliability ◽

10.1016/j.microrel.2009.04.003 ◽

2009 ◽

Vol 49 (7) ◽

pp. 716-720 ◽

Author(s):

P. Thangadurai ◽

W.D. Kaplan ◽

V. Mikhelashvili ◽

G. Eisenstein

Keyword(s):

Electron Beam ◽

Electron Beam Irradiation ◽

Electrical Characteristics ◽

Beam Irradiation ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

High K Dielectric

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Physical and electrical properties of induced high-k ZrHfO crystallization with ZrN cap by high power impulse magnetron sputtering for metal–gate metal–insulator–semiconductor structures

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.01ad02 ◽

2016 ◽

Vol 56 (1S) ◽

pp. 01AD02 ◽

Author(s):

Jung-Ruey Tsai ◽

Pi-Chun Juan ◽

Cheng-Li Lin ◽

Guo-Cheng Lin

Keyword(s):

Electrical Properties ◽

Magnetron Sputtering ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

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GaAs high-k dielectric metal-insulator-semiconductor structure having silicon interface control layer

physica status solidi (c) ◽

10.1002/pssc.200779208 ◽

2008 ◽

Vol 5 (9) ◽

pp. 2729-2732 ◽

Author(s):

M. Akazawa ◽

H. Hasegawa

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Interface Control ◽

High K ◽

High K Dielectric ◽

Silicon Interface ◽

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Nb2O5 high-k dielectric enabled electric field engineering of β-Ga2O3 metal–insulator–semiconductor (MIS) diode

Journal of Applied Physics ◽

10.1063/5.0075627 ◽

2021 ◽

Vol 130 (24) ◽

pp. 245701

Author(s):

Prabhans Tiwari ◽

Jayeeta Biswas ◽

Chandan Joishi ◽

Saurabh Lodha

Keyword(s):

Electric Field ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

High K Dielectric ◽

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Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical properties of metal-insulator-metal and metal-insulator-semiconductor structures containing Langmuir-Blodgett insulating multilayers

Thin Solid Films ◽

10.1016/0040-6090(89)90173-9 ◽

1989 ◽

Vol 179 (1-2) ◽

pp. 121-127 ◽

Author(s):

F Kaneko ◽

M Shibata ◽

Y Inaba ◽

S Kobayashi

Keyword(s):

Electrical Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Langmuir Blodgett ◽

Semiconductor Structures ◽

Metal Insulator Metal

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Nature of Impurities in .pi.-Conjugated Polymers Prepared by Ferric Chloride and Their Effect on the Electrical Properties of Metal-Insulator-Semiconductor Structures

Chemistry of Materials ◽

10.1021/cm00052a006 ◽

1995 ◽

Vol 7 (4) ◽

pp. 631-641 ◽

Author(s):

Mohamed S. A. Abdou ◽

Xiaotang Lu ◽

Zi W. Xie ◽

Frank Orfino ◽

M. Jamal Deen ◽

...

Keyword(s):

Electrical Properties ◽

Conjugated Polymers ◽

Ferric Chloride ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Pi Conjugated ◽

Pi Conjugated Polymers

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