Effects of Substrate Terminal on the Dynamic Resistance and the Midpoint Potential of High Voltage Cascode GaN HEMTs

2019 ◽  
Author(s):  
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YongSheng Zhu ◽  
GuangMin Deng ◽  
ShuFeng Zhao ◽  
Yi Pe
Keyword(s):  
High Voltage ◽  
Dynamic Resistance ◽  
Midpoint Potential ◽  
Gan Hemts

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

2020 ◽  
Vol 67 (12) ◽  
pp. 5454-5459
Author(s):  
Xuan Li ◽  
Shiwei Feng ◽  
Chang Liu ◽  
Yamin Zhang ◽  
Kun Bai ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
High Voltage ◽  
Measurement Method ◽  
Resistance Measurement ◽  
Gan Hemts

Breakdown behaviour of high-voltage GaN-HEMTs

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1682-1686 ◽  
Author(s):  
W. Saito ◽  
T. Suwa ◽  
T. Uchihara ◽  
T. Naka ◽  
T. Kobayashi
Keyword(s):  
High Voltage ◽  
Gan Hemts

(Invited) The Stability of High Voltage AlGaN/GaN HEMTs

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Vol 66 (7) ◽  
pp. 127-137
Author(s):  
C.-F. Huang ◽  
T.-F. Chang ◽  
Y.-H. Wang ◽  
Y. C. Liang
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High Voltage ◽  
Gan Hemts ◽  
The Stability

High Voltage GaN HEMTs

1999 ◽  
Author(s):  
N.-Q. Zhang ◽  
J. P. Ibbetson ◽  
S. Keller ◽  
R. Vetury ◽  
S. DenBaars ◽  
...  
Keyword(s):  
High Voltage ◽  
Gan Hemts
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