Effect of growth temperature on the thermal stability of 1.3μm InAs/InGaAs/GaAs quantum dot structures

Author(s):  
C. Y. Ngo ◽  
S. F. Yoon ◽  
C. S. Lim ◽  
Vincent Wong ◽  
S. J. Chua
1997 ◽  
Vol 31 (1) ◽  
pp. 84-87 ◽  
Author(s):  
A. E. Zhukov ◽  
A. Yu. Egorov ◽  
A. R. Kovsh ◽  
V. M. Ustinov ◽  
M. V. Maksimov ◽  
...  

2018 ◽  
Vol 18 (11) ◽  
pp. 7536-7541 ◽  
Author(s):  
Qing-Lu Liu ◽  
Chun-Cai Hou ◽  
Hong-Mei Chen ◽  
Ji-Qiang Ning ◽  
Qi-Zhu Li ◽  
...  

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4439
Author(s):  
Shui-Yang Lien ◽  
Yu-Hao Chen ◽  
Wen-Ray Chen ◽  
Chuan-Hsi Liu ◽  
Chien-Jung Huang

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.


2014 ◽  
Vol 35 (9) ◽  
pp. 1051-1057
Author(s):  
陈肖慧 CHEN Xiao-hui ◽  
袁曦 YUAN Xi ◽  
华杰 HUA Jie ◽  
赵家龙 ZHAO Jia-long ◽  
李海波 LI Hai-bo

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