Measurement of Free-Carrier Absorption Cross-Sections for Laser Diode Waveguide Materials

2020 ◽  
Author(s):  
Yu. K. Bobretsova ◽  
D. A. Veselov ◽  
N. A. Rudova ◽  
V. A. Kapitonov ◽  
S. O. Slipchenko ◽  
...  
Keyword(s):  
Laser Diode ◽  
Cross Sections ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Cross ◽  
Carrier Absorption

scholarly journals Оптические свойства монокристаллического германия в терагерцовой области спектра

2019 ◽  
Vol 126 (3) ◽  
pp. 271
Author(s):  
И.А. Каплунов ◽  
А.И. Колесников ◽  
Г.И. Кропотов ◽  
В.Е. Рогалин
Keyword(s):  
Single Crystals ◽  
Cross Sections ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Cross ◽  
Phonon Interaction ◽  
A Value ◽  
Carrier Absorption ◽  
The Difference ◽  
Silicon And Germanium

AbstractThe transmission of intrinsic, antimony-doped, and gallium-doped Ge single crystals in the THz spectral range have been experimentally investigated. It is shown that the attenuation coefficient of intrinsic germanium in the range of 160‒220 μm is at a level of ~0.5 cm^‒1, a value comparable with that for silicon. The free-carrier absorption cross sections of silicon and germanium are significantly different, which may be caused by the difference in the mechanisms of carrier–phonon interaction in these materials.

4-QAM OFDM Data Switching via Free Carrier Absorption in Si-Rich SiC Waveguide

2021 ◽  
Vol 27 (3) ◽  
pp. 1-11
Author(s):  
Yen-Wei Hsueh ◽  
Chih-Hsien Cheng ◽  
Cai-Syuan Fu ◽  
Huai-Yung Wang ◽  
Bo-Ji Huang ◽  
...  
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Data Switching

Free carrier absorption in heavily doped silicon layers

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped
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