Analytical Modeling of the Triggering Drain Voltage at the Onset of the Kink Effect for PD SOI NMOS

Author(s):  
M. Sarajlic ◽  
R. Ramovic
1992 ◽  
Vol 258 ◽  
Author(s):  
G. Fortunato ◽  
L. Mariucci ◽  
A. Mattacchini ◽  
A. Pecora

ABSTRACTAn avalanche increase of the drain current for high source-drain voltage (commonly called “kink effect”) has been observed for the first time in short-channel amorphous silicon thin-film transistors, fabricated using electron-beam lithography. This effect, caused by generation mechanisms at the drain junction, has been shown to be not only field but also temperature enhanced. The Frenkel-Poole mechanism is proposed in order to explain the data.


2018 ◽  
Vol 49 (5) ◽  
pp. 385-394 ◽  
Author(s):  
Najlawi Bilel ◽  
Nejlaoui Mohamed

2005 ◽  
Author(s):  
Paul A. Durbin ◽  
John K. Eaton ◽  
Greg Laskowski ◽  
Amanda Vicharelli

2017 ◽  
Vol 9 (6) ◽  
pp. 06009-1-06009-4 ◽  
Author(s):  
Nitin Sachdeva ◽  
◽  
Munish Vashishath ◽  
P. K. Bansal ◽  
◽  
...  

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