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2-D analytical modeling of drain and gate-leakage currents of cylindrical gate asymmetric halo doped dual material-junctionless accumulation mode MOSFET
AEU - International Journal of Electronics and Communications
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10.1016/j.aeue.2020.153071
◽
2020
◽
Vol 116
◽
pp. 153071
◽
Cited By ~ 1
Author(s):
Kamalaksha Baral
◽
Prince Kumar Singh
◽
Sanjay Kumar
◽
Ashish Singh
◽
Manas Tripathy
◽
...
Keyword(s):
Analytical Modeling
◽
Gate Leakage
◽
Leakage Currents
◽
Accumulation Mode
◽
Dual Material
Download Full-text
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Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
◽
10.23919/ispsd.2017.7988922
◽
2017
◽
Cited By ~ 3
Author(s):
Toshiyuki Naka
◽
Wataru Saito
Keyword(s):
High Voltage
◽
Gate Leakage
◽
Leakage Currents
◽
Gan Hemts
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2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric
Acta Physica Sinica
◽
10.7498/aps.57.3807
◽
2008
◽
Vol 57
(6)
◽
pp. 3807
Author(s):
Luan Su-Zhen
◽
Liu Hong-Xia
◽
Jia Ren-Xu
◽
Cai Nai-Qiong
Keyword(s):
Analytical Modeling
◽
Fully Depleted
◽
Soi Mosfet
◽
High K
◽
High K Dielectric
◽
Dual Material
Download Full-text
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure
IEEE Transactions on Electron Devices
◽
10.1109/ted.2017.2656630
◽
2017
◽
Vol 64
(3)
◽
pp. 960-968
◽
Cited By ~ 72
Author(s):
Sanjay Kumar
◽
Ekta Goel
◽
Kunal Singh
◽
Balraj Singh
◽
Prince Kumar Singh
◽
...
Keyword(s):
Analytical Modeling
◽
Gate Oxide
◽
Double Gate
◽
Electrical Characteristics
◽
Oxide Structure
◽
Dual Material
Download Full-text
Dual Material-Stacked Hetero-Dielectric-Junctionless Accumulation Mode Nanotube MOSFET for enhanced Hot Carrier and Trapped Charges Reliability
2019 Electron Devices Technology and Manufacturing Conference (EDTM)
◽
10.1109/edtm.2019.8731216
◽
2019
◽
Author(s):
Kamalaksha Baral
◽
Prince Kumar Singh
◽
Sanjay Kumar
◽
Sweta Chander
◽
Manas Ranjan Tripathy
◽
...
Keyword(s):
Accumulation Mode
◽
Hot Carrier
◽
Dual Material
Download Full-text
Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET
2019 Devices for Integrated Circuit (DevIC)
◽
10.1109/devic.2019.8783284
◽
2019
◽
Cited By ~ 1
Author(s):
Pritha Banerjee
◽
Priyanka Saha
◽
Dinesh Kumar Dash
◽
Subir Kumar Sarkar
Keyword(s):
Surface Potential
◽
Analytical Modeling
◽
Double Gate
◽
Gate Stack
◽
High K
◽
Double Gate Mosfet
◽
Dual Material
Download Full-text
Design optimization of stacked layer dielectrics for minimum gate leakage currents
Solid-State Electronics
◽
10.1016/s0038-1101(00)00185-4
◽
2000
◽
Vol 44
(12)
◽
pp. 2165-2170
◽
Cited By ~ 19
Author(s):
J Zhang
◽
J.S Yuan
◽
Y Ma
◽
A.S Oates
Keyword(s):
Design Optimization
◽
Gate Leakage
◽
Leakage Currents
Download Full-text
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe
IEEE Electron Device Letters
◽
10.1109/led.2008.2011754
◽
2009
◽
Vol 30
(3)
◽
pp. 285-287
◽
Cited By ~ 16
Author(s):
J. Huang
◽
P.D. Kirsch
◽
Jungwoo Oh
◽
Se Hoon Lee
◽
P. Majhi
◽
...
Keyword(s):
Gate Leakage
◽
Gate Stacks
◽
Metal Gate
◽
Leakage Currents
◽
High K
Download Full-text
Analytical modeling of stress-induced leakage currents in 5.1–9.6-nm-thick silicon-dioxide films based on two-step inelastic trap-assisted tunneling
Journal of Applied Physics
◽
10.1063/1.1312842
◽
2000
◽
Vol 88
(9)
◽
pp. 5238-5245
◽
Cited By ~ 7
Author(s):
Markus Lenski
◽
Tetsuo Endoh
◽
Fujio Masuoka
Keyword(s):
Silicon Dioxide
◽
Analytical Modeling
◽
Leakage Currents
◽
Silicon Dioxide Films
◽
Trap Assisted Tunneling
◽
Assisted Tunneling
Download Full-text
Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
Advanced Engineering Materials
◽
10.1002/adem.202000901
◽
2020
◽
pp. 2000901
Author(s):
Dongjin Kim
◽
Mohammad Masum Billah
◽
Suhui Lee
◽
Abu Bakar Siddik
◽
Young Joo Cho
◽
...
Keyword(s):
Thin Film
◽
Temperature Stress
◽
Thin Film Transistor
◽
Plastic Substrate
◽
Gate Leakage
◽
Leakage Currents
◽
Mechanical Durability
◽
Bias Temperature Stress
◽
Si Thin Film
Download Full-text
Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.45.l111
◽
2006
◽
Vol 45
(No. 4)
◽
pp. L111-L113
◽
Cited By ~ 25
Author(s):
Tamotsu Hashizume
◽
Junji Kotani
◽
Alberto Basile
◽
Masamitsu Kaneko
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Control Process
◽
Gate Leakage
◽
Leakage Currents
◽
Surface Control
◽
Heterostructure Field Effect Transistors
◽
Gan Heterostructure
Download Full-text
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