Microwave frequency measurements and modeling of MOSFETs on low resistivity silicon substrates

ABSTRACTWe have synthesized epitaxial TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The TiN films were characterized using X-ray diffraction, Rutherford back-scattering, four-point-probe ac resistivity, high resolution transmission electron microscopy techniques and epitaxial relationship was found to be <100> TiN // <100> Si. TiN films showed 10–20% channeling yield. In the plane, four unit cells of TiN match with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides a new mechanism of epitaxial growth in systems with large lattice misfits. Room-temperature resistivity of these films was found to be about 15 μΩ-cm. Implications of low-resistivity epitaxial TiN in silicon device fabrication are discussed.

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Nonuniform Optical Undersampling for High-Resolution Microwave Frequency Measurements

IEEE Photonics Technology Letters ◽

10.1109/lpt.2012.2192102 ◽

2012 ◽

Vol 24 (12) ◽

pp. 997-999 ◽

Cited By ~ 2

Author(s):

Daniel R. Reilly ◽

Shawn X. Wang ◽

Gregory S. Kanter

Keyword(s):

High Resolution ◽

Microwave Frequency ◽

Frequency Measurements

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A high-stability quasi-spherical resonator in SPRIGT for microwave frequency measurements at low temperatures

Science Bulletin ◽

10.1016/j.scib.2019.01.018 ◽

2019 ◽

Vol 64 (5) ◽

pp. 286-288 ◽

Cited By ~ 5

Author(s):

Haiyang Zhang ◽

Wenjing Liu ◽

Bo Gao ◽

Yanyan Chen ◽

Changzhao Pan ◽

...

Keyword(s):

Low Temperatures ◽

High Stability ◽

Microwave Frequency ◽

Frequency Measurements ◽

Spherical Resonator

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Millimeter-wave tapered slot antenna for integration on micromachined low resistivity silicon substrates

2009 IEEE International Workshop on Antenna Technology ◽

10.1109/iwat.2009.4906949 ◽

2009 ◽

Author(s):

Shi Cheng ◽

Anders Rydberg ◽

Paul Hallbjorner ◽

Lars Pettersson ◽

Michael Salter ◽

...

Keyword(s):

Millimeter Wave ◽

Slot Antenna ◽

Silicon Substrates ◽

Low Resistivity

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Structural and Electrical Properties of Molecular Beam Deposited Polycrystalline Silicon

MRS Proceedings ◽

10.1557/proc-106-83 ◽

1987 ◽

Vol 106 ◽

Author(s):

Sylvain L. Delage ◽

S.-J. Jeng ◽

D. Jousse ◽

S. S. Iyer

Keyword(s):

Electrical Properties ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Molecular Beam ◽

Solid Phase ◽

Chemical Vapor ◽

Silicon Substrates ◽

Low Resistivity ◽

Structural And Electrical Properties ◽

Polycrystalline Silicon Films

ABSTRACTThe structural and electrical properties have been investigated of antimony doped polycrystalline silicon films obtained by molecular beam deposition on oxidized silicon substrates. We show that low resistivity films with smooth morphology are obtained by Solid Phase Crystallization of antimony doped amorphous silicon layers deposited at 250°C. A resistivity of 4.3 mΩ cm is obtained by crystallizing the films at temperatures as low as 650°C for 15 minutes. Similar resistivities are typically obtained by Chemical Vapor Deposition at temperature of at least 850 °C. In-situ crystallization of the amorphous silicon is needed to obtain low resistivity polysilicon. We also show that direct deposition above 650 ° C gives rise to polycrystalline silicon with much higher resistivities.

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In Situ Investigation of the a-Si:H/C-Si Interface

MRS Proceedings ◽

10.1557/proc-420-449 ◽

1996 ◽

Vol 420 ◽

Author(s):

H. Feist ◽

C. Swiatkowski ◽

J. R. Elmiger ◽

M. Zipfel ◽

M. Kunst

Keyword(s):

Crystalline Silicon ◽

Microwave Frequency ◽

Ex Situ ◽

Silicon Substrates ◽

Si Substrates ◽

In Situ Investigation ◽

Drastic Increase ◽

Interface Recombination Velocity ◽

Recombination Velocity

AbstractThe deposition of a-Si:H films on crystalline silicon substrates was monitored in situ by transient photoconductivity measurements in the microwave frequency range. At the start of the deposition a drastic increase of the interface recombination velocity was observed, followed by a rapid decrease. The implications of these results for the structure of the interface are discussed. Changes of the interface after deposition were detected without a change of the temperature, even at 250'C: The long relaxation time of the structure of the interface will be discussed. Ex situ results on the samples produced will be compared to the in situ results in view of the passivation properties of a-Si:H films on c-Si substrates.

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