Comparison of hot-carrier and radiation induced increases in base current in bipolar transistors

R.L. Pease; S.L. Kosier; R.D. Schrimpf; W.E. Combs; M. Davey; M. DeLaus; D.M. Fleetwood

doi:10.1109/23.340617

Comparison of hot-carrier and radiation induced increases in base current in bipolar transistors

IEEE Transactions on Nuclear Science ◽

10.1109/23.340617 ◽

1994 ◽

Vol 41 (6) ◽

pp. 2567-2573 ◽

Cited By ~ 6

Author(s):

R.L. Pease ◽

S.L. Kosier ◽

R.D. Schrimpf ◽

W.E. Combs ◽

M. Davey ◽

...

Keyword(s):

Bipolar Transistors ◽

Hot Carrier ◽

Base Current ◽

Radiation Induced

Get full-text (via PubEx)

Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics

Journal of Applied Physics ◽

10.1063/1.1352560 ◽

2001 ◽

Vol 89 (7) ◽

pp. 4049-4058 ◽

Cited By ~ 12

Author(s):

D. Pogany ◽

J. A. Chroboczek ◽

G. Ghibaudo

Keyword(s):

Bipolar Transistors ◽

Random Telegraph Signal ◽

Signal Noise ◽

Carrier Trapping ◽

Hot Carrier ◽

Base Current ◽

Noise Characteristics

Get full-text (via PubEx)

Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00175-x ◽

2000 ◽

Vol 40 (8-10) ◽

pp. 1579-1584 ◽

Cited By ~ 5

Author(s):

J Kuchenbecker ◽

M Borgarino ◽

A Coustou ◽

R Plana ◽

J Graffeuil ◽

...

Keyword(s):

Numerical Simulation ◽

Ionizing Radiation ◽

Heterojunction Bipolar Transistors ◽

Low Complexity ◽

Bipolar Transistors ◽

Hot Carrier ◽

Radiation Induced

Get full-text (via PubEx)

A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress

Solid-State Electronics ◽

10.1016/s0038-1101(98)00131-2 ◽

1998 ◽

Vol 42 (9) ◽

pp. 1679-1687 ◽

Cited By ~ 8

Author(s):

E. Simoen ◽

S. Decoutere ◽

C. Claeys ◽

L. Deferm

Keyword(s):

Bipolar Transistors ◽

Hot Carrier ◽

Base Current ◽

Hot Carrier Stress ◽

Before And After ◽

Polysilicon Emitter

Get full-text (via PubEx)

Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide

Electronics Letters ◽

10.1049/el:19990479 ◽

1999 ◽

Vol 35 (9) ◽

pp. 752 ◽

Cited By ~ 2

Author(s):

J. Schiz ◽

P. Ashburn

Keyword(s):

Bipolar Transistors ◽

Base Current ◽

Polysilicon Emitter

Get full-text (via PubEx)

On hot-carrier induced degradation, temperature, bias and emitter geometry dependences of the DC characteristics of polysilicon-emitter bipolar transistors

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174936 ◽

2003 ◽

Author(s):

S.R. Sheng ◽

S.P. McAlister ◽

C. Storey ◽

L.-S. Lee ◽

H.P. Hwang

Keyword(s):

Bipolar Transistors ◽

Hot Carrier ◽

Temperature Bias ◽

Degradation Temperature ◽

Dc Characteristics ◽

Polysilicon Emitter

Get full-text (via PubEx)

Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3097695 ◽

2021 ◽

pp. 1-6

Author(s):

Peijian Zhang ◽

Zicheng Xu ◽

Tao Wang ◽

Wensuo Chen ◽

Min Hong ◽

...

Keyword(s):

Bipolar Transistors ◽

Time Dependent ◽

High Current ◽

Combined Stress ◽

Hot Carrier ◽

Polysilicon Emitter ◽

Hot Carrier Degradation

Get full-text (via PubEx)

Characterization and modeling of base current in n-p-n polysilicon emitter bipolar transistors using low-frequency noise analysis

10.1117/12.186749 ◽

1994 ◽

Author(s):

David Quon ◽

Yang H. Chang ◽

Gregory J. Sonek ◽

Guann-pyng Li

Keyword(s):

Noise Analysis ◽

Low Frequency ◽

Bipolar Transistors ◽

Frequency Noise ◽

Low Frequency Noise ◽

Base Current ◽

Polysilicon Emitter

Get full-text (via PubEx)

Electrical Measurement of the Bandgap of N+ and P+ SiGe Formed by Ge Ion Implantation

MRS Proceedings ◽

10.1557/proc-500-69 ◽

1997 ◽

Vol 500 ◽

Cited By ~ 1

Author(s):

Akira Nishiyama ◽

Osamu Arisumi ◽

Makoto Yoshimi

Keyword(s):

Ion Implantation ◽

Theoretical Calculation ◽

Temperature Dependence ◽

Electrical Measurement ◽

Bipolar Transistors ◽

Floating Body ◽

High Dose ◽

Base Current ◽

Source Regions ◽

Heavily Doped

ABSTRACTN+ and p+ SiGe layers were formed in the source regions of SOI MOSFETs in order to suppress the floating-body effects by means of high-dose Ge implantation. The bandgaps of the layers were evaluated by measuring the temperature dependence of the base current of the source/channel/drain lateral bipolar transistors. It has been found that the reductions of the bandgaps due to the SiGe formation by the Ge implantation were relatively small, compared to those obtained by the theoretical calculation for heavily doped SiGe. It was also found that the bandgap reduction was larger for n+ layers than that for p+ layers.

Get full-text (via PubEx)