Optical sensitivity and barrier property depending on ILD layers of CMOS image sensor device

2003 ◽  
Author(s):  
Sang Jong Park ◽  
Kwang Jin Kim ◽  
Joong Heon Kim ◽  
Seong Joon Lee ◽  
Sun Woong Woo ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Barrier Property ◽  
Optical Sensitivity ◽  
Sensor Device

Design of a novel chip on glass package solution for CMOS image sensor device

2006 ◽  
Vol 46 (8) ◽  
pp. 1326-1334 ◽  
Author(s):  
Ching-Yang Chen ◽  
Yung-Ching Chao ◽  
De-Shin Liu ◽  
Zhen-Wei Zhuang
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sensor Device

Flip-chip packaging solution for CMOS image sensor device

2004 ◽  
Vol 44 (1) ◽  
pp. 155-161 ◽  
Author(s):  
Jong-heon Kim ◽  
In-Soo Kang ◽  
Chi-jung Song ◽  
Young-Jik Hur ◽  
Hak-Nam Kim ◽  
...  
Keyword(s):  
Flip Chip ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sensor Device ◽  
Flip Chip Packaging

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Linear Response ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Signal To Noise ◽  
Single Exposure ◽  
Two Stage ◽  
Noise Ratio ◽  
Maximum Signal

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

A 10-bit ratio-independent cyclic ADC with offset canceling for a CMOS image sensor

2014 ◽  
Vol 35 (3) ◽  
pp. 035005 ◽  
Author(s):  
Kaiming Nie ◽  
Suying Yao ◽  
Jiangtao Xu ◽  
Zhaorui Jiang
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Cyclic Adc
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