High power IMPATT diodes utilizing ion implantation

We fabricated a p+/n-/n+ 4H-SiC IMPATT diode with guard-ring termination. The p+ - layer and the guard-ring were formed by ion implantation. The diode showed abrupt avalanche breakdown characteristics and we obtained a peak output power of 1.8 W at 11.93 GHz, which is the highest peak output power ever for the SiC IMPATT diodes in X-band.

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High-power impatt diodes utilizing ion implantation

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1968.16238 ◽

1968 ◽

Vol 15 (6) ◽

pp. 415-416

Author(s):

R.G. Mankarious ◽

R.S. Ying ◽

R.W. Bower ◽

D.L. English

Keyword(s):

Ion Implantation ◽

High Power ◽

Impatt Diodes

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High-power parallel-array IMPATT diodes

Electronics Letters ◽

10.1049/el:19710208 ◽

1971 ◽

Vol 7 (11) ◽

pp. 301-303 ◽

Cited By ~ 4

Author(s):

A.M. Cowley ◽

R.C. Patterson

Keyword(s):

High Power ◽

Parallel Array ◽

Impatt Diodes

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High-power and highly reliable operation of Al-Free InGaAs-InGaAsP 0.98-μm lasers with a window structure fabricated by Si ion implantation

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/2944.788455 ◽

1999 ◽

Vol 5 (3) ◽

pp. 817-821 ◽

Cited By ~ 16

Author(s):

K. Hiramoto ◽

M. Sagawa ◽

T. Kikawa ◽

S. Tsuji

Keyword(s):

Ion Implantation ◽

High Power ◽

Reliable Operation ◽

Si Ion Implantation

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Ion Implantation and Annealing Effects in Silicon Carbide

MRS Proceedings ◽

10.1557/proc-438-241 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 52

Author(s):

V. Heera ◽

W. Skorupa

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Ion Implantation ◽

High Power ◽

High Frequency ◽

Ion Beam ◽

Surface Erosion ◽

Annealing Effects ◽

Ion Ranges ◽

Induced Crystallization

AbstractSiC is a promising semiconductor material for high-power/high-frequency and hightemperature electronic applications. For selective doping of SiC ion implantation is the only possible process. However, relatively little is known about ion implantation and annealing effects in SiC. Compared to ion implantation into Si there is a number of specific features which have to be considered for successful ion beam processing of SiC. A brief review is given on some aspects of ion implantation in and annealing of SiC. The ion implantation effects in SiC are discussed in direct comparison to Si. The following issues are addressed: ion ranges, radiation damage, amorphization, high temperature implantation, ion beim induced crystallization and surface erosion.

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Application of high-power ion beams for technology

Laser and Particle Beams ◽

10.1017/s0263034600006467 ◽

1993 ◽

Vol 11 (4) ◽

pp. 707-731 ◽

Cited By ~ 72

Author(s):

G.E. Remnev ◽

V.A. Shulov

Keyword(s):

Thin Films ◽

Ion Implantation ◽

High Power ◽

Industrial Applications ◽

Ion Beams ◽

Experimental Investigations ◽

Material Engineering

Industrial applications of high-power ion beams, basically in the field of material engineering, are presented. The results of experimental investigations of some kinds of applications, such as ion implantation, metal modification, and compounds production of thin films, are considered.

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