Ion Implantation and Annealing Effects in Silicon Carbide

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Heera ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
High Power ◽  
High Frequency ◽  
Ion Beam ◽  
Surface Erosion ◽  
Annealing Effects ◽  
Ion Ranges ◽  
Induced Crystallization

AbstractSiC is a promising semiconductor material for high-power/high-frequency and hightemperature electronic applications. For selective doping of SiC ion implantation is the only possible process. However, relatively little is known about ion implantation and annealing effects in SiC. Compared to ion implantation into Si there is a number of specific features which have to be considered for successful ion beam processing of SiC. A brief review is given on some aspects of ion implantation in and annealing of SiC. The ion implantation effects in SiC are discussed in direct comparison to Si. The following issues are addressed: ion ranges, radiation damage, amorphization, high temperature implantation, ion beim induced crystallization and surface erosion.

Challenges for High Temperature Silicon Carbide Electronics

2003 ◽  
Vol 764 ◽  
Author(s):  
C.-M. Zetterling ◽  
S.-M. Koo ◽  
E. Danielsson ◽  
W. Liu ◽  
S.-K. Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
High Frequency ◽  
Process Technology ◽  
High Temperature Electronics ◽  
Higher Power ◽  
Device Structures ◽  
Power Densities

AbstractSilicon carbide has been proposed as an excellent material for high-frequency, high-power and high-temperature electronics. High power and high frequency applications have been pursued for quite some time in SiC with a great deal of success in terms of demonstrated devices. However, self-heating problems due to the much higher power densities that result when ten times higher electrical fields are used inside the devices needs to be addressed. High-temperature electronics has not yet experienced as much attention and success, possibly because there is no immediate market. This paper will review some of the advances that have been made in high-temperature electronics using silicon carbide, starting from process technology, continuing with device design, and finishing with circuit examples. For process technology, one of the biggest obstacles is long-term stable contacts. Several device structures have been electrically characterized at high temperature (BJTs and FETs) and will be compared to surface temperature measurements and physical device simulation. Finally some proposed circuit topologies as well as novel solutions will be presented.

Ion Beam Synthesis of Silicon Carbide : Infra-Red and RBS Studies

1994 ◽  
Vol 354 ◽  
Author(s):  
L. Simon ◽  
A. Mesu ◽  
J. J. Grob ◽  
T. Heiser ◽  
J. L. Balladore
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
Thin Layer ◽  
Point Defects ◽  
Ion Beam ◽  
Limiting Factor ◽  
Thermally Activated ◽  
Infra Red ◽  
Thermally Activated Process

AbstractWe report on p-SiC thin layer synthesis by carbon ion implantation at high temperature. Infra-red and RBS analysis were performed on samples implanted at temperatures ranging from 200 to 900°C and for carbon doses varying in the range 1017to2.1018 cm . RBS analysis does not reveal any diffusion or segregation of carbon up to 900°C. At this temperature we obtained the optimum Infra-red signature. The (3-SiC formation is shown to be a thermally activated process with an energy of 0.1 eV leading us to speculate that the diffusion of point defects could be the limiting factor of the process.

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

1994 ◽  
Vol T54 ◽  
pp. 283-290 ◽  
Author(s):  
E Janzén ◽  
O Kordina ◽  
A Henry ◽  
W M Chen ◽  
N T Son ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
High Frequency ◽  
High Frequency Devices

Physical Properties of SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 25-29 ◽  
Author(s):  
W.J. Choyke ◽  
G. Pensl
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Physical Properties ◽  
Chemical Bond ◽  
High Power ◽  
National Program ◽  
High Radiation ◽  
Electrical Switching ◽  
Oil Drilling ◽  
Drilling Technology

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes

2018 ◽  
Vol 924 ◽  
pp. 302-305
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Frequency ◽  
High Performance ◽  
Light Emitting Diode ◽  
Wide Bandgap ◽  
Photovoltaic Device ◽  
Light Emitting ◽  
Current Voltage ◽  
Bandgap Semiconductors

In the last decade, silicon carbide (SiC) has gained a remarkable position among wide bandgap semiconductors due to its high temperature, high frequency, and high power electronics applications. SiC heterostructures, based on the most prominent polytypes like 3C-SiC, 4H-SiC and 6H-SiC, exhibit distinctive electrical and physical properties that make them promising candidates for high performance optoelectronic applications. The results of simulations of nn-junction 3C-4H/SiC and 6H-4H/SiC heterostructures, at the nanoscale and microscale, are presented in this paper. Nanoscale devices are simulated with QuantumWise Atomistix Toolkit (ATK) software, and microscale devices are simulated with Silvaco TCAD software. Current-voltage (IV) characteristics of nanoscale and microscale simulated devices are compared and discussed. The effects of non-ideal bonding at the heterojunction interface due to lattice misplacements (axial displacement of bonded wafers) are studied using the ATK simulator. These simulations lay the groundwork for the experiments, which are targeted to produce either a photovoltaic device or a light-emitting diode (working in the ultraviolet or terahertz spectra), by direct bonding of SiC polytypes.

scholarly journals Performance of Various SiC Devices and their Behavior in DC/DC Converter

2019 ◽  
Vol 9 (2S3) ◽  
pp. 62-67
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Voltage ◽  
Material Properties ◽  
High Frequency ◽  
Buck Converter ◽  
Nano Materials ◽  
Comparative Performance ◽  
Semiconducting Properties ◽  
Good Material

An extensive research on nano materials was carried out and the properties of Si were studied, Post study it was felt that there must be a material which exhibits semiconducting properties of Si with high breakdown voltage and work till high temperature range. Silicon Carbide (SiC) devices provided the answer for this. These devices are well known for high frequency, high voltage, high temperature and high power for their good material properties compared with silicon power MOSFET. In this paper, a study was conducted on various Silicon Carbide devices available in the market and the comparative performance of these devices were analysed. Furthermore there is a comparison of N channel silicon MOSFET device and silicon carbide device placed in bidirectional DC/DC buck converter in which Silicon Carbide device exhibit superior properties than Si device.

An SEM Investigation of Annealing Encapsulants for SiC

2000 ◽  
Vol 6 (S2) ◽  
pp. 1094-1095
Author(s):  
M. H. Ervin ◽  
K. A. Jones ◽  
M. A. Derenge ◽  
K. W. Kirchnef ◽  
M.C. Wood ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Engine Oil ◽  
Robust Performance ◽  
Chemical Inertness ◽  
High Breakdown Electric Field ◽  
Sem Investigation ◽  
Temperature Applications

Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.

Study of ion implantation and annealing effects in silicon wafers using high-frequency phonon scattering

1992 ◽  
Vol 18 (8) ◽  
pp. 631-636 ◽  
Author(s):  
K. R. Strickland ◽  
S. C. Edwards ◽  
J. K. Wigmore ◽  
R. A. Collins ◽  
C. Jeynes
Keyword(s):  
Ion Implantation ◽  
High Frequency ◽  
Phonon Scattering ◽  
Silicon Wafers ◽  
Annealing Effects
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