Overcoming Cu/CVD low-k integration challenges in a high performance interconnect technology

Author(s):  
S.A. Lytle ◽  
S. Karthikeyan ◽  
I.O. Oladeji ◽  
T.J. Lee ◽  
H.M. Li ◽  
...  
RSC Advances ◽  
2016 ◽  
Vol 6 (73) ◽  
pp. 68560-68567 ◽  
Author(s):  
Lingqiang Kong ◽  
Tianke Qi ◽  
Zhidong Ren ◽  
Yunxia Jin ◽  
Yan Li ◽  
...  

Intrinsic highly cross-linked low-k benzocyclobutene polymer functionalized with adamantyl and perfluorocyclobutylidene.


1998 ◽  
Vol 514 ◽  
Author(s):  
D. Edelstein

ABSTRACTRecently IBM announced the first implementation of full copper ULSI wiring in a CMOS technology, to be manufactured on its high-performance 0.22 um CMOS products this year. Features of this technology will be presented, as well as functional verification on CMOS chips. To reach this level, extensive yield, reliability, and stress testing had to be done on test and product-like chips, including those packaged into product modules. Data will be presented fom all aspects of this testing, ranging from experiments designed to promote Cu contamination of the MOS devices, to temperature/humidity/bias stressing of assembled functional modules. The results in all areas are shown to be equal to or better than standards set by our current AI(Cu)/Wstud technology. This demonstrates that the potential problems associated with copper wiring that have long been discussed can be overcome.


2016 ◽  
Vol 5 (10) ◽  
pp. P578-P583 ◽  
Author(s):  
Naoki Torazawa ◽  
Susumu Matsumoto ◽  
Takeshi Harada ◽  
Yasunori Morinaga ◽  
Daisuke Inagaki ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (24) ◽  
pp. 14406-14412 ◽  
Author(s):  
Yuanrong Cheng ◽  
Wenhao Chen ◽  
Zhuo Li ◽  
Tangwei Zhu ◽  
Ziyu Zhang ◽  
...  

A new synthetic route involving the hydrolysis and condensation of a BCB precursor for high performance low-K benzocyclobutene-functionalized polymers was developed.


2014 ◽  
Vol 2014 (1) ◽  
pp. 000141-000147 ◽  
Author(s):  
John M. Lauffer ◽  
Kevin Knadle

Common themes across all segments of electronic packaging today are density and performance. High density interconnect (HDI) technology is one of the most commonly utilized methods for electronic package density improvement, while many different areas have been investigated for performance improvement, from low loss dielectric and conductor materials, to via design and via stub reduction. Electrical performance and density requirements are sometimes complementary, but often times, conflicting with one another. This paper will describe the design, materials, fabrication, and reliability of a new Z-Interconnect technology that addresses both high density and high performance demands simultaneously. Z-Interconnect technology uses an electrically conductive adhesive to electrically interconnect several cores (Full Z) or sub-composites (Sub Z) in a single lamination process. Z-Interconnect technology will be compared and contrasted to other commonly used solutions to the performance and density challenges. HDI or sequential build-up technology is a pervasive solution to the density demands in semiconductor packaging and consumer electronics (e.g. Smart phones), but has not caught hold in HPC or A&D printed wiring board (PWB) applications. One solution for PWB electrical performance enhancement is plated through hole (PTH) stub reduction by “back drilling” the unwanted portion of the PTH. Pb-free reflow and Current Induced Thermal Cycling (CITC) test results of product coupons and specially designed test vehicles, having component pitches down to 0.4mm, will be presented. Z-Interconnect test vehicles have survived 6X Pb-free (260C) reflow cycles, followed by greater than 3000 cycles of 23C–150C CITC cycles. Test vehicle and product coupons also easily survive 10 or more 23C–260C CITC cycles.


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