Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

2004 ◽  
Author(s):  
S. Takagi ◽  
T. Mizuno ◽  
T. Tezuka ◽  
N. Sugiyama ◽  
T. Numata ◽  
...  
Keyword(s):  
Transport Properties ◽  
Carrier Transport ◽  
Structure Design ◽  
Channel Structure ◽  
Strained Si ◽  
Carrier Transport Properties

ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4234-4237
Author(s):  
XUEQIN LIU ◽  
CONGMIAN ZHEN ◽  
YINYUE WANG ◽  
JING ZHANG ◽  
YUEJIAO PU ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Transport Properties ◽  
Hall Mobility ◽  
Carrier Transport ◽  
Lattice Strain ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Strained Si ◽  
Carrier Transport Properties

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

Intrinsic carrier transport properties of solution-processed organic–inorganic perovskite films

2017 ◽  
Vol 10 (2) ◽  
pp. 024103 ◽  
Author(s):  
Toshinori Matsushima ◽  
Sunbin Hwang ◽  
Shinobu Terakawa ◽  
Takashi Fujihara ◽  
Atula S. D. Sandanayaka ◽  
...  
Keyword(s):  
Transport Properties ◽  
Carrier Transport ◽  
Solution Processed ◽  
Inorganic Perovskite ◽  
Carrier Transport Properties
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