ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

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Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy

Applied Physics Letters ◽

10.1063/1.3119631 ◽

2009 ◽

Vol 94 (15) ◽

pp. 152105 ◽

Cited By ~ 17

Author(s):

Kenji Sugiura ◽

Hiromichi Ohta ◽

Shin-ichi Nakagawa ◽

Rong Huang ◽

Yuichi Ikuhara ◽

...

Keyword(s):

Transport Properties ◽

Carrier Transport ◽

Solid Phase ◽

Epitaxial Films ◽

Solid Phase Epitaxy ◽

Carrier Transport Properties

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Influence of Oxygen Annealing on Electrical Properties of ZnO:Cl Thin Films

MRS Proceedings ◽

10.1557/proc-0994-f01-07 ◽

2007 ◽

Vol 994 ◽

Cited By ~ 1

Author(s):

Tamar Tchelidze ◽

Ekaterine Chikoidze ◽

Francois Jomard ◽

Ouri Gorochov ◽

Pierre Galtier

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Transport Properties ◽

Chemical Reactions ◽

Vapour Pressure ◽

Carrier Transport ◽

Oxygen Annealing ◽

Oxygen Treatment ◽

Different Temperatures ◽

Carrier Transport Properties

AbstractThe influence of oxygen treatment on carrier transport properties of pure ZnO and ZnO:Cl thin films grown by MOCVD were studied. The experimentally obtained values of carrier concentrations after oxyden treatment at different temperatures, were compared with the the results obtained from thermodynemical analysis of the system: ZnO:Cl-Oxyen vapour pressure, using method of quasi-chemical reactions (QCR).

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Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269165 ◽

2004 ◽

Cited By ~ 47

Author(s):

S. Takagi ◽

T. Mizuno ◽

T. Tezuka ◽

N. Sugiyama ◽

T. Numata ◽

...

Keyword(s):

Transport Properties ◽

Carrier Transport ◽

Structure Design ◽

Channel Structure ◽

Strained Si ◽

Carrier Transport Properties

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Quantitative evaluation of sandstone carrier transport properties and their effects on hydrocarbon migration and accumulation: A case study of the Es32 in the southern slope of Dongying Depression, Bohai Bay Basin

Marine and Petroleum Geology ◽

10.1016/j.marpetgeo.2021.104937 ◽

2021 ◽

Vol 126 ◽

pp. 104937

Author(s):

Fuwei Wang ◽

Dongxia Chen ◽

Qiaochu Wang ◽

Xuebin Shi ◽

Mengya Jiang ◽

...

Keyword(s):

Transport Properties ◽

Quantitative Evaluation ◽

Carrier Transport ◽

Bohai Bay ◽

Southern Slope ◽

Bohai Bay Basin ◽

Hydrocarbon Migration ◽

Dongying Depression ◽

Carrier Transport Properties

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Carrier Transport Properties of InS Single Crystals

Crystal Research and Technology ◽

10.1002/1521-4079(200210)37:10<1104::aid-crat1104>3.0.co;2-a ◽

2002 ◽

Vol 37 (10) ◽

pp. 1104-1112 ◽

Cited By ~ 6

Author(s):

A. F. Qasrawi ◽

N. M. Gasanly

Keyword(s):

Transport Properties ◽

Single Crystals ◽

Carrier Transport ◽

Carrier Transport Properties

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Room Temperature Steady-State and Transient Carrier Transport Properties of Germanium Single Electron/Hole Transistors

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1662615 ◽

2006 ◽

Author(s):

W.T. Lai ◽

P.W. Li ◽

D.M.T. Kuo

Keyword(s):

Steady State ◽

Transport Properties ◽

Carrier Transport ◽

Room Temperature ◽

Single Electron ◽

Electron Hole ◽

Carrier Transport Properties

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Systematic Control of the Excited-State Dynamics and Carrier-Transport Properties of Functionalized Benzo[ghi]perylene and Coronene Derivatives

Chemistry - A European Journal ◽

10.1002/chem.201304679 ◽

2014 ◽

pp. n/a-n/a ◽

Cited By ~ 13

Author(s):

Sunao Hirayama ◽

Hayato Sakai ◽

Yasuyuki Araki ◽

Minako Tanaka ◽

Masaki Imakawa ◽

...

Keyword(s):

Excited State ◽

Transport Properties ◽

Carrier Transport ◽

Excited State Dynamics ◽

Systematic Control ◽

Carrier Transport Properties

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Optical Waveguide Formation by Ion Implantation of Ti or Ag

MRS Proceedings ◽

10.1557/proc-100-311 ◽

1988 ◽

Vol 100 ◽

Cited By ~ 2

Author(s):

D. B. Poker ◽

D. K. Thomas

Keyword(s):

Ion Implantation ◽

Concentration Profile ◽

Optical Waveguides ◽

Annealing Temperature ◽

Solid Phase ◽

Effective Means ◽

Complete Removal ◽

Solid Phase Epitaxy ◽

Annealing Temperatures ◽

Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

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