How good is mono-layer transition-metal dichalcogenide tunnel field-effect transistors in sub-10 nm? - An ab initio simulation study

2015 ◽  
Author(s):  
Xiang-Wei Jiang ◽  
Jun-Wei Luo ◽  
Shu-Shen Li ◽  
Lin-Wang Wang
Keyword(s):  
Transition Metal ◽  
Ab Initio ◽  
Simulation Study ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenide ◽  
Layer Transition ◽  
Ab Initio Simulation ◽  
Mono Layer

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

Tuning Transition-Metal Dichalcogenide Field-Effect Transistors by Spontaneous Pattern Formation of an Ultrathin Molecular Dopant Film

ACS Nano ◽  
2018 ◽  
Vol 12 (10) ◽  
pp. 10123-10129 ◽  
Author(s):  
Hisashi Ichimiya ◽  
Masahiro Takinoue ◽  
Akito Fukui ◽  
Kohei Miura ◽  
Takeshi Yoshimura ◽  
...  
Keyword(s):  
Pattern Formation ◽  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenide
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