3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications

2019 ◽  
Author(s):  
Han Wui Then ◽  
C. Y. Huang ◽  
B. Krist ◽  
K. Jun ◽  
K. Lin ◽  
...  
Keyword(s):  
Energy Efficient ◽  
High Performance ◽  
Power Delivery ◽  
High Resistivity ◽  
Heterogeneous Integration ◽  
Si Substrate ◽  
Metal Gate ◽  
High K

32nm gate-first high-k/metal-gate technology for high performance low power applications

2008 ◽  
Author(s):  
C. H. Diaz ◽  
K. Goto ◽  
H.T. Huang ◽  
Yuri Yasuda ◽  
C.P. Tsao ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Metal Gate ◽  
High K

High Performance Metal Gate CMOSFETs with Aggressively Scaled Hf-Based High-k

2019 ◽  
Vol 1 (5) ◽  
pp. 609-623 ◽  
Author(s):  
Seung-Chul Song ◽  
G. L. Zhang ◽  
S. H. Bae ◽  
P. Kirsch ◽  
P. Majhi ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Gate ◽  
High K

High performance FDSOI CMOS technology with metal gate and high-k

2005 ◽  
Author(s):  
B. Doris ◽  
Y.H. Kim ◽  
B.P. Linder ◽  
M. Steen ◽  
V. Narayanan ◽  
...  
Keyword(s):  
High Performance ◽  
Cmos Technology ◽  
Metal Gate ◽  
High K
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