A high performance double gate dopingless metal oxide semiconductor field effect transistor

2014 20th International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2014.6939996 ◽

2014 ◽

Author(s):

Sajad A. Loan ◽

Faisal Bashir ◽

M. Rafat ◽

Abdul Rahman M. Alamoud ◽

Shuja A. Abbasi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

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Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4737779 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024513 ◽

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

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A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations

Journal of Applied Physics ◽

10.1063/1.2360379 ◽

2006 ◽

Vol 100 (8) ◽

pp. 084320 ◽

Author(s):

A. Lázaro ◽

B. Nae ◽

O. Moldovan ◽

B. Iñiguez

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Model ◽

Double Gate ◽

Effect Transistor

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Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-014-0584-5 ◽

2014 ◽

Vol 89 (6) ◽

pp. 593-598

Author(s):

S. Sarkhel ◽

B. Manna ◽

S. K. Sarkar

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

And Performance

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Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits

Journal of Applied Physics ◽

10.1063/1.1778485 ◽

2004 ◽

Vol 96 (9) ◽

pp. 5271-5276 ◽

Author(s):

D. Jiménez ◽

B. Iñíguez ◽

J. Suñé ◽

J. J. Sáenz

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scaling Limits ◽

Double Gate ◽

Analog Performance ◽

Effect Transistor

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High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Applied Physics Letters ◽

10.1063/1.2956393 ◽

2008 ◽

Vol 93 (3) ◽

pp. 033516 ◽

Author(s):

T. D. Lin ◽

H. C. Chiu ◽

P. Chang ◽

L. T. Tung ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Applied Physics Letters ◽

10.1063/1.2173715 ◽

2006 ◽

Vol 88 (7) ◽

pp. 072103 ◽

Author(s):

Meishoku Masahara ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Takashi Matsukawa ◽

Kunihiro Sakamoto ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Fabrication And Characterization

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Sensitivity Analysis of Double Gate Metal Oxide Semiconductor Field Effect Transistor for Bio-Sensing Applications

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2466 ◽

2019 ◽

Vol 14 (1) ◽

pp. 136-145 ◽

Author(s):

B. Buvaneswari ◽

N. B. Balamurugan

Keyword(s):

Sensitivity Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Sensing Applications ◽

Effect Transistor

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Performance Analysis of Impact of Source/Drain Doping Gradients Well as Roll-Off Widths on Gate Induced Drain Leakage of Double Gate Metal Oxide Semiconductor Field Effect Transistor

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2426 ◽

2018 ◽

Vol 13 (11) ◽

pp. 1705-1710

Author(s):

Parveen Kumar ◽

Sandeep Singh Gill

Keyword(s):

Performance Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.1767619 ◽

2004 ◽

Vol 96 (4) ◽

pp. 2305-2310 ◽

Author(s):

M. D. Croitoru ◽

V. N. Gladilin ◽

V. M. Fomin ◽

J. T. Devreese ◽

W. Magnus ◽

...

Keyword(s):

Metal Oxide ◽

Quantum Transport ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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