Cu dual damascene interconnects in porous organosilica film with organic hard-mask and etch-stop layers for 70 nm-node ULSIs

2003 ◽  
Author(s):  
M. Tada ◽  
Y. Harada ◽  
K. Hijioka ◽  
H. Ohtake ◽  
T. Takeuchi ◽  
...  
Keyword(s):  
Hard Mask ◽  
Dual Damascene ◽  
Etch Stop ◽  
Damascene Interconnects

Robust Cu Dual Damascene Interconnects With Porous SiOCH Films Fabricated by Low-Damage Multi-Hard-Mask Etching Technology

2006 ◽  
Vol 19 (4) ◽  
pp. 455-464 ◽  
Author(s):  
H. Ohtake ◽  
M. Tagami ◽  
M. Tada ◽  
M. Ueki ◽  
M. Abe ◽  
...  
Keyword(s):  
Hard Mask ◽  
Dual Damascene ◽  
Mask Etching ◽  
Damascene Interconnects

Novel Cu reflow seed process for Cu/low-k 64nm pitch dual damascene interconnects and beyond

2012 ◽  
Author(s):  
K. Motoyama ◽  
O. van der Straten ◽  
H. Tomizawa ◽  
J. Maniscalco ◽  
S.T. Chen
Keyword(s):  
Dual Damascene ◽  
Damascene Interconnects ◽  
Low K

scholarly journals Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects

2004 ◽  
Vol 812 ◽  
Author(s):  
Z. -S. Choi ◽  
C. L. Gan ◽  
F. Wei ◽  
C. V. Thompson ◽  
J. H. Lee ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Failure Mechanisms ◽  
Simulation Tool ◽  
Void Size ◽  
Dual Damascene ◽  
Preferential Nucleation ◽  
Failure Correlation ◽  
Void Volumes ◽  
Damascene Interconnects ◽  
Critical Void

AbstractThe median-times-to-failure (t50's) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads (metal 2, M2, or via-below structures) or connect up to overlaying leads (metal 1, M1, or via-above structures). Experimental results for a variety of line lengths, widths, and numbers of vias show higher t50's for M2 structures than for analogous M1 structures. It has been shown that despite this asymmetry in lifetimes, the electromigration drift velocity is the same for these two types of structures, suggesting that fatal void volumes are different in these two cases. A numerical simulation tool based on the Korhonen model has been developed and used to simulate the conditions for void growth and correlate fatal void sizes with lifetimes. These simulations suggest that the average fatal void size for M2 structures is more than twice the size of that of M1 structures. This result supports an earlier suggestion that preferential nucleation at the Cu/Si3N4 interface in both M1 and M2 structures leads to different fatal void sizes, because larger voids are required to span the line thickness in M2 structures while smaller voids below the base of vias can cause failures in M1 structures. However, it is also found that the fatal void sizes corresponding to the shortest-times-to-failure (STTF's) are similar for M1 and M2, suggesting that the voids that lead to the shortest lifetimes occur at or in the vias in both cases, where a void need only span the via to cause failure. Correlation of lifetimes and critical void volumes provides a useful tool for distinguishing failure mechanisms.

N5 technology node dual-damascene interconnects enabled using multi patterning

2017 ◽  
Author(s):  
B. Briggs ◽  
C. J. Wilson ◽  
K. Devriendt ◽  
M. H. van der Veen ◽  
S. Decoster ◽  
...  
Keyword(s):  
Technology Node ◽  
Dual Damascene ◽  
Damascene Interconnects

The effect of line width on stress-induced voiding in Cu dual damascene interconnects

2006 ◽  
Vol 504 (1-2) ◽  
pp. 298-301 ◽  
Author(s):  
W. Shao ◽  
Z.H. Gan ◽  
S.G. Mhaisalkar ◽  
Zhong Chen ◽  
Hongyu Li
Keyword(s):  
Line Width ◽  
Dual Damascene ◽  
Damascene Interconnects
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