Structural characterization of methylsilsesquioxane-based porous low-k thin films using X-ray porosimetry

Author(s):  
H.J. Lee ◽  
C.L. Soles ◽  
D.-W. Liu ◽  
B.J. Bauer ◽  
E.K. Lin ◽  
...  
2012 ◽  
Vol 544 ◽  
pp. 34-38 ◽  
Author(s):  
T. Hosokai ◽  
A. Hinderhofer ◽  
A. Vorobiev ◽  
C. Lorch ◽  
T. Watanabe ◽  
...  

2003 ◽  
Vol 82 (7) ◽  
pp. 1084-1086 ◽  
Author(s):  
Hae-Jeong Lee ◽  
Eric K. Lin ◽  
Barry J. Bauer ◽  
Wen-li Wu ◽  
Byung Keun Hwang ◽  
...  

2008 ◽  
Vol 41 (3) ◽  
pp. 136-143
Author(s):  
A. Essafti ◽  
E. Ech‐chamikh ◽  
Y. Ijdiyaou ◽  
M. Azizan

2014 ◽  
Vol 92 (7/8) ◽  
pp. 902-904 ◽  
Author(s):  
N. Seña ◽  
F. Mesa ◽  
A. Dussan ◽  
G. Gordillo

This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.


1994 ◽  
Vol 76 (6) ◽  
pp. 3337-3340 ◽  
Author(s):  
S. Henke ◽  
K. H. Thürer ◽  
J. K. N. Lindner ◽  
B. Rauschenbach ◽  
B. Stritzker

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