Growth and structural characterization of Cu2ZnSnSe4 compound for solar cells

2014 ◽  
Vol 92 (7/8) ◽  
pp. 902-904 ◽  
Author(s):  
N. Seña ◽  
F. Mesa ◽  
A. Dussan ◽  
G. Gordillo
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Deposition Temperature ◽  
Mass Ratio ◽  
Electrical Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Stage Process

This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.

Structural characterization of the temperature dependence of C60‐thin films on mica (001) by x‐ray diffraction

1994 ◽  
Vol 76 (6) ◽  
pp. 3337-3340 ◽  
Author(s):  
S. Henke ◽  
K. H. Thürer ◽  
J. K. N. Lindner ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Structural Characterization ◽  
X Ray Diffraction ◽  
X Ray

Structural characterization of cadmium selenide thin films by X-ray diffraction and electron microscopy

1992 ◽  
Vol 25 (10) ◽  
pp. 1488-1494 ◽  
Author(s):  
U Pal ◽  
D Samanta ◽  
S Ghorai ◽  
B K Samantaray ◽  
A K Chaudhuri
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Cadmium Selenide ◽  
Structural Characterization ◽  
X Ray Diffraction ◽  
X Ray

Preparation and Characterization of PMN (PbMgxNb1−xOz) Films by Sputtering

1994 ◽  
Vol 361 ◽  
Author(s):  
J.S. Cross ◽  
M. Tsukada ◽  
K. Kurihara ◽  
N. Kamehara ◽  
K. Niwa
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Negative Ion ◽  
Lead Target ◽  
X Ray Diffraction ◽  
X Ray ◽  
Magnesium Niobate ◽  
Icp Analysis ◽  
Deposited Films

ABSTRACTThin films of Pb(MgxNb1−x)Oz were produced by reactive sputtering from a lead target and columbite magnesium niobate powder targets at temperatures of 500–700°C on Pt/Ti/Si, Pt/SiO2/Si, MgO(lOO) and SrTiO3(100) substrates. The films in general deposited on Pt consisted of PbO and pyrochlore phases depending upon the deposition temperature. ICP analysis revealed that the films contained slightly less Mg than the target. This was attributed to negative ion preferential resputtering of the film within the discharge. However, films deposited at 650°C on MgO and SrTiO3 substrates from a lead target and magnesium niobate target which contained excess MgO, contained a highly oriented perovskite (100) Pb(Mg1/3Nb2/3)O3 [PMN] phase according to X-ray diffraction analysis. It was observed that the substrate composition and orientation greatly influenced the crystallinity of the deposited films.

Characterization of TiO2 Thin Films Deposited by SILAR Method

2013 ◽  
Vol 678 ◽  
pp. 75-79 ◽  
Author(s):  
Rachel Oommen ◽  
P. Usha Rajalakshmi ◽  
R. Saranya ◽  
S. Saranya ◽  
A. Sudha
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Ammonium Hydroxide ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Deposition Parameters ◽  
Titanium Trichloride ◽  
Indirect Band Gap

SILAR method is adopted for the deposition of titanium dioxide (TiO2) thin films. Titanium trichloride and ammonium hydroxide are used as the cationic and anionic precursors respectively. Deposition parameters such as growth rate, individual dipping and rinsing times and precursor concentration are optimized to obtain uniform, adherent films. As-deposited TiO2films are annealed at 300°C and 400° C. The crystallization behaviour of TiO2thin films is analysed by X-ray diffraction. Optical constants of the films are evaluated using UV-Vis spectrophotometry. Effect of deposition parameters on the optical properties of the films is analysed.The direct and indirect band gap values of the TiO2thin films is in the range of 3.4-3.8 eV and 2.1-3.8 eV respectively.

FABRICATION AND CHARACTERIZATION OF CuInSe2 THIN FILMS GROWN BY MEANS OF A TWO-STAGE PROCESS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1671-1674
Author(s):  
G. GORDILLO ◽  
F. LANDAZÁBAL
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Parameter Study ◽  
X Ray Diffraction ◽  
Two Stage ◽  
Glass Substrates ◽  
Deposition Parameters ◽  
Stage Process

CuInSe 2 thin films were deposited on soda lime glass substrates following a two-stage process which includes a chemical reaction between thin films of Cu and In x Se y, followed by thermal annealing in a Se environment. Initially, the Cu layer is deposited on the glass substrate by DC magnetron sputtering in the S-gun configuration, and subsequently the In x Se y layer is deposited by the closed spaced sublimation (CSS) method. The influence of the deposition method and of the main deposition parameters of the precursor layers (Cu and In x Se y) on the phases present in the resulting compound were studied by means of X-ray diffraction (XRD) and optical gap (Eg) measurements. The conditions for growing CuInSe 2 thin films in the chalcopyrite phase were determined through an exhaustive parameter study. The study revealed that the thickness of the precursor layers and the selenization conditions affect the phase in which the CuInSe 2 compound grows.

Structural characterization of strained (Ba0.5,Sr0.5)TiO3 thin films grown on Si by synchrotron X-ray diffraction

2001 ◽  
Vol 38 (1-4) ◽  
pp. 201-210
Author(s):  
Sungjin Jun ◽  
Sangsub Kim ◽  
Jungho Je ◽  
Jaichan Lee
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
X Ray Diffraction ◽  
X Ray
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