Microwave wide bandgap GaN high electron mobility transistor development and its monolithic integrated circuits (Invited)
Reliability of multi-channel Ga1−xAlxas high electron mobility transistor (HEMT) integrated circuits
1991 ◽
Vol 7
(6)
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pp. 461-467
2011 ◽
Vol 1
(1)
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pp. 25-32
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2001 ◽
Vol 41
(8)
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pp. 1109-1113
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1998 ◽
Vol 31
(2)
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pp. 159-164
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2006 ◽
Vol 45
(No. 35)
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pp. L932-L934
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2004 ◽
Vol 43
(12)
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pp. 8019-8023
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