Thin silicon layer as heat channel for low-loss SiN tunable devices

Author(s):  
Charles Caer ◽  
Sarvagya Dwivedi
Keyword(s):  
Low Loss ◽  
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions


2012 ◽  
Vol 48 (5) ◽  
pp. 287 ◽  
Author(s):  
L.J. Wu ◽  
W.T. Zhang ◽  
M. Qiao ◽  
B. Zhang ◽  
Z.J. Li

2005 ◽  
Vol 87 (23) ◽  
pp. 231108 ◽  
Author(s):  
M. A. Webster ◽  
R. M. Pafchek ◽  
G. Sukumaran ◽  
T. L. Koch

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