Continuous-Wave Raman Lasing in Silicon Ring Resonator with Sub-Milliwatt Pump Threshold

Author(s):  
Yaojing Zhang ◽  
Wen Zhou ◽  
Dan Yi ◽  
Yeyu Tong ◽  
Yi Wang ◽  
...  
2021 ◽  
Vol 11 (1) ◽  
pp. 407
Author(s):  
Jinho Lee ◽  
Ju Han Lee

This study reports a Q-switching-based, 2058-nm holmium (Ho) fiber laser incorporating a saturable absorber (SA) based on graphene oxide (GO). The SA was prepared with a side-polished fiber, while GO particles were deposited onto the fiber-polished surface to realize an all-fiber SA. A continuous-wave thulium-doped all-fiber laser, which was configured with a master-oscillator power-amplifier (MOPA) structure, was constructed as a pumping source. By inserting the fabricated SA into an all-fiber ring resonator based on 1-m length of Ho-doped fiber, Q-switched pulses could readily be obtained at a wavelength of 2058 nm. The pulse width was observed to vary from 2.01 to 1.56 μs as the pump power was adjusted from ~759 to 1072 mW, while the repetition rate was tunable from 45.56 to 56.12 kHz. The maximum values of average optical power and pulse energy were measured as ~11.61 mW and 207.05 nJ, respectively, at a ~1072 mW pump power.


2020 ◽  
Vol 18 (45) ◽  
pp. 9-20
Author(s):  
Zainab Salam Khaleefia ◽  
Sh. S. Mahdi ◽  
S. Kh. Yaseen

Numerical analysis predicts that continuous-wave (CW) Raman lasing is possible in Silicon-On-insulator (SOI) nano-waveguides, despite of presence of free carrier absorption. The scope of this paper lies on lasers for communication systems around 1550 nm wavelength. Two types of waveguide structures Strip and Rib waveguides have been incorporated. The waveguide structures have designed to be 220 nm in height. Three different widths of (350, 450, 1000) nm were studied. The dependence of lasing of the SOI Raman laser on effective carrier lifetime was discussed, produced by tow photon absorption. At telecommunication wavelength of 1550 nm, Raman lasing threshold was calculated to be 1.7 mW in Rib SOI waveguide with dimensions width (W= 450 nm) and Length (L= 25 mm). The obtained Raman lasing is the lowest reported value at relatively high reflectivities. Raman laser in SOI nano-waveguides presents the important step towards integrated on-chip optoelectronic devices.


1991 ◽  
Vol 59 (26) ◽  
pp. 3360-3362 ◽  
Author(s):  
J. P. Hohimer ◽  
D. C. Craft ◽  
G. R. Hadley ◽  
G. A. Vawter ◽  
M. E. Warren

Author(s):  
P. A. Molian ◽  
K. H. Khan ◽  
W. E. Wood

In recent years, the effects of chromium on the transformation characteristics of pure iron and the structures produced thereby have been extensively studied as a function of cooling rate. In this paper, we present TEM observations made on specimens of Fe-10% Cr and Fe-20% Cr alloys produced through laser surface alloying process with an estimated cooling rate of 8.8 x 104°C/sec. These two chromium levels were selected in order to study their phase transformation characteristics which are dissimilar in the two cases as predicted by the constitution diagram. Pure iron (C<0.01%, Si<0.01%, Mn<0.01%, S=0.003%, P=0.008%) was electrodeposited with chromium to the thicknesses of 40 and 70μm and then vacuum degassed at 400°F to remove the hydrogen formed during electroplating. Laser surface alloying of chromium into the iron substrate was then performed employing a continuous wave CO2 laser operated at an incident power of 1200 watts. The laser beam, defocussed to a spot diameter of 0.25mm, scanned the material surface at a rate of 30mm/sec, (70 ipm).


2007 ◽  
Vol 177 (4S) ◽  
pp. 614-614
Author(s):  
Thorsten Bach ◽  
Thomas R.W. Herrmann ◽  
Roman Ganzer ◽  
Andreas J. Gross

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