scholarly journals Prospect of CW Raman Laser in Silicon- on- Insulator Nano-Waveguides

2020 ◽  
Vol 18 (45) ◽  
pp. 9-20
Author(s):  
Zainab Salam Khaleefia ◽  
Sh. S. Mahdi ◽  
S. Kh. Yaseen
Keyword(s):  
Communication Systems ◽  
Continuous Wave ◽  
Raman Laser ◽  
Silicon On Insulator ◽  
Photon Absorption ◽  
Lasing Threshold ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Raman Lasing ◽  
On Chip

Numerical analysis predicts that continuous-wave (CW) Raman lasing is possible in Silicon-On-insulator (SOI) nano-waveguides, despite of presence of free carrier absorption. The scope of this paper lies on lasers for communication systems around 1550 nm wavelength. Two types of waveguide structures Strip and Rib waveguides have been incorporated. The waveguide structures have designed to be 220 nm in height. Three different widths of (350, 450, 1000) nm were studied. The dependence of lasing of the SOI Raman laser on effective carrier lifetime was discussed, produced by tow photon absorption. At telecommunication wavelength of 1550 nm, Raman lasing threshold was calculated to be 1.7 mW in Rib SOI waveguide with dimensions width (W= 450 nm) and Length (L= 25 mm). The obtained Raman lasing is the lowest reported value at relatively high reflectivities. Raman laser in SOI nano-waveguides presents the important step towards integrated on-chip optoelectronic devices.

TUNABLE ASYMMETRIC FANO LINESHAPES IN SILICON-BASED MICRORING RESONATORS WITH FEEDBACK

2011 ◽  
Vol 20 (03) ◽  
pp. 357-366 ◽  
Author(s):  
SANTHAD PITAKWONGSAPORN ◽  
SURASAK CHIANGGA
Keyword(s):  
Continuous Wave ◽  
Operating Regime ◽  
Free Carrier ◽  
Photon Absorption ◽  
Microring Resonators ◽  
Free Carrier Absorption ◽  
Coupling Coefficients ◽  
Linear Absorption ◽  
Carrier Absorption ◽  
Silicon Based

We theoretically examine the Fano lineshapes of silicon-based compound microring resonators consisting of a single resonator channel dropping filter linked to a loop as a feedback structure. All possible optical effects for the continuous-wave operating regime, such as linear absorption or scattering, two-photon absorption, free-carrier absorption and dispersion, thermo-optics, are simultaneously considered. We show that sharp Fano resonances can be tuned by variation in the coupling coefficients, length of feedback loop, effective free carrier lifetime and the temperature inside the device. Tunable Fano lineshapes open up opportunities for applications in sensing, computing, and communications.

The Role of Free Carrier Absorption in LADA

2014 ◽  
Author(s):  
Kent Erington ◽  
Dan Bodoh ◽  
Kris Dickson ◽  
George Lange
Keyword(s):  
Integrated Circuit ◽  
Continuous Wave ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Electron Hole Pair ◽  
Carrier Absorption

Abstract Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuit. In this paper, the characterization of continuous wave 1340nm laser induced currents and the LADA failure rate show that a two photon absorption explanation for the LADA effect is not plausible. The following sections confirm the results of a 28nm-node nMOS transistor using a 2.45NA solid immersion lens. The effects of global heating to that of local laser heating are then compared. The paper shows that the LADA response time to approximately 1300nm irradiation is << 100ns. It explains LADA at approximately 1300nm, free carrier absorption in the silicon and in the local silicide layers, and presents selected 1320nm LADA images on 28nm-node devices. Finally, it shows 1064nm LADA images on the same structure that indicate that 1064nm interaction with transistors is related to free carrier absorption, rather than electron-hole pair creation.

Free Carrier Absorption Loss of p-i-n Silicon-On-Insulator (SOI) Phase Modulator

2011 ◽  
Author(s):  
H. Hazura ◽  
A. R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P. S. Menon ◽  
...  
Keyword(s):  
Free Carrier ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Carrier Absorption

scholarly journals Ultrafast Broadband Nonlinear Optical Response in Co-Doped Sb2Se3 Nanofilms at Near-Infrared

2021 ◽  
Vol 8 ◽  
Author(s):  
Di Sun ◽  
Yu Fang ◽  
Xiaoyan Yan ◽  
Wen Shan ◽  
Wenjun Sun ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Near Infrared ◽  
Optical Response ◽  
Free Carrier ◽  
Nonlinear Optical Response ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Ultrafast Carrier ◽  
Carrier Absorption ◽  
Co Doped

Transition metal-doped Sb2Se3 has become a heated topic caused by the strong nonlinear optical response and the ultrafast response time at high laser excitation. In this paper, the Co-doped Sb2Se3 with different doping amount (0.5, 1.0, and 1.5 W) nanofilms were prepared by magnetron sputtering technology, and the nonlinear behavior of Co-doped Sb2Se3 nanofilms at near infrared were systematically studied. The results of the femtosecond Z-Scan experiment indicate that the Co-doped Sb2Se3 nanofilms exhibit broadband nonlinear response properties owing to the free carrier absorption, the Kerr refraction, the two-photon absorption, and the free carrier refraction. The nonlinear absorption coefficients of Co-doped Sb2Se3 nanofilms are from 3.0 × 10−9 to 2.03 × 10−8 m/ W under excitation at 800, 980, and 1,030 nm, and the nonlinear refractive index of the Co-doped Sb2Se3 nanofilms is from 4.0 × 10−16 to -3.89 × 10−15 m2/ W at 800, 980, and 1,030 nm. More importantly, Co-doped Sb2Se3 (1.5 W) nanofilm exhibits ultrafast carrier absorption (<1 ps) and a stronger transient absorption intensity of ΔOD > 6.3. The Co-doping content can controllably tune the crystalline degree, the ultrafast carrier absorption, the intensity of the reverse saturation absorption, the broadband nonlinear optical response, and the carrier relaxation time of Co-doped Sb2Se3 nanofilms. These results are sufficient to support their applications in broadband nonlinear photonic devices.

Nonlinear loss characterization of continuous wave guiding in silicon wire waveguides

2021 ◽  
Author(s):  
Masatoshi TOKUSHIMA ◽  
Jun Ushida ◽  
Takahiro Nakamura
Keyword(s):  
Continuous Wave ◽  
Short Pulse ◽  
Propagation Loss ◽  
Photon Absorption ◽  
Light Sources ◽  
Free Carrier Absorption ◽  
Silicon Waveguides ◽  
Nonlinear Loss ◽  
Parameter Values

Abstract Accurate propagation loss characterization of silicon waveguides is increasingly demanded for silicon-photonics-(Si-Ph) applications with high-power continuous-wave-(CW) light sources. We report on nonlinear loss parameters of silicon wire waveguides for 1.31-μm-wavelength CW light extracted from transmission data measured for different lengths and polarizations. Such parameters were, so far, unavailable, although they are required for accurately modeling Si-Ph optical circuits. More-than-ten-times enhancement of two-photon absorption from prior results for short pulse light was observed at power densities ranging up to 4.7×1011 W/m2 while free carrier absorption was suppressed. We estimate the nonlinear loss of the waveguide using the parameter values obtained

Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

2013 ◽  
Vol 21 (4) ◽  
Author(s):  
A. Tyszka-Zawadzka ◽  
P. Szczepański ◽  
A. Mossakowska-Wyszyńska ◽  
M. Karpierz ◽  
M. Bugaj
Keyword(s):  
Pump Power ◽  
Numerical Solutions ◽  
Analytical Formula ◽  
Raman Laser ◽  
Silicon On Insulator ◽  
Photon Absorption ◽  
Pump Field ◽  
Rib Waveguide ◽  
System Parameters ◽  
Field Distributions

AbstractAn approximate method of modelling of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator including spatial field distribution and nonlinear effects such as Raman amplification and two photon absorption (TPA), is developed. In threshold analysis of steady-state Raman laser operation, an analytical formula relating threshold pump power to the system parameters is obtained. The analysis of the above threshold operation is based on an energy theorem. In exact energy conservation relation, we approximate the Stokes field distributions by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. An approximate, semi-analytical expression related the Raman output power to the pump power and system parameters is derived. Our calculations remain in a good agreement with the exact numerical solutions.

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