Direct BSIM3v3 parameter extraction for hot-carrier reliability simulation of N-channel LDD MOSFETs

Author(s):  
S. Minehane ◽  
S. Healy ◽  
P. O'Sullivan ◽  
K. McCarthy ◽  
A. Mathewson ◽  
...  



1991 ◽  
Vol 225 ◽  
Author(s):  
A. Hassein-Bey ◽  
S. Cristoloveanu

ABSTRACTThe influence of the localized defective channel region formed by hot carrier injection on the basic characteristics of P-channel transistors is systematically investigated and modeled. A practical method of parameter extraction in stressed P-MOSFET's is proposed. It is based on the comparison of Ids(Vg) characteristics before and after stress in weak and strong inversion.





1997 ◽  
Vol 37 (10-11) ◽  
pp. 1437-1440 ◽  
Author(s):  
S. Minehane ◽  
S. Healy ◽  
P. O'Sullivan ◽  
K. McCarthy ◽  
A. Mathewson ◽  
...  




1981 ◽  
Vol 42 (C7) ◽  
pp. C7-51-C7-56
Author(s):  
K. Aoki ◽  
T. Kobayashi ◽  
K. Yamamoto


1988 ◽  
Vol 49 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
C. BERGONZONI ◽  
R. BENECCHI ◽  
P. CAPRARA


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