Bulk driven indirect feedback compensation technique for low-voltage applications

Author(s):  
Arash Esmaili ◽  
Hadiseh Babazadeh ◽  
Khayrollah Hadidi ◽  
Abdollah Khoei
2014 ◽  
Vol 17 (1) ◽  
pp. 62-70
Author(s):  
Khanh Trung Le ◽  
Tu Trong Bui ◽  
Hung Duc Le ◽  
Kha Cong Pham

In the paper, we present a design of a low voltage Operation Amplifier (OPAMP) circuit using split-length transistors. Indirect feedback compensation is an advanced technique used to stabilize the operation of an OPAMP. Cascode transistors are usually implemented for indirect feedback systems. However, these transistors are not suitable for low voltage design. In this study, we have taken advantage of split-length transistors and indirect feedback compensation technique to design a high performance OPAMP. As a result, the OPAMP operates not only at low supply voltage but also at high frequency. The OPAMP has been designed and fabricated in a 0.18um CMOS technology. This OPAMP achieves 100 dB gain, 90 MHz unity gain frequency and 60 degrees phase margin at 2 V supply voltage.


Author(s):  
Urvashi Bansal ◽  
Maneesha Gupta ◽  
Niranjan Raj

The importance of a transimpedance amplifier in an optical transceiver is very well known. In this paper, a novel CMOS design of the bulk-driven transimpedance amplifier (BD-TIA) is given where the bridge-shunt peaking-based frequency compensation technique is exploited to improve frequency response. A pre-existing active inductor has been used for the same. The electrical characteristics and functioning of this inductor simulator make it a suitable alternative to both floating and grounded spiral inductors. In order to verify the workability of the proposed circuit, it has been simulated with TSMC CMOS 0.18[Formula: see text][Formula: see text]m process parameters. The proposed circuit is useful in low-voltage low-power VLSI applications as it uses a single supply of 0.75[Formula: see text]V. The power consumption of BD-TIA is very low, being 0.37[Formula: see text]mW, because a standard MOSFET has been replaced by a bulk-driven MOSFET (BDMOS), while the 3-dB bandwidth is observed to be 4.5[Formula: see text]GHz. The mathematical investigation and small signal analysis show that the simulation results are in good agreement.


2018 ◽  
Vol 71 ◽  
pp. 37-46 ◽  
Author(s):  
Behnam Abdollahi ◽  
Baset Mesgari ◽  
Saeed Saeedi ◽  
Abdolreza Nabavi

2010 ◽  
Vol E93-C (6) ◽  
pp. 835-841 ◽  
Author(s):  
Yusuke TSUGITA ◽  
Ken UENO ◽  
Tetsuya HIROSE ◽  
Tetsuya ASAI ◽  
Yoshihito AMEMIYA

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