scholarly journals An On-Chip PVT Compensation Technique with Current Monitoring Circuit for Low-Voltage CMOS Digital LSIs

2010 ◽  
Vol E93-C (6) ◽  
pp. 835-841 ◽  
Author(s):  
Yusuke TSUGITA ◽  
Ken UENO ◽  
Tetsuya HIROSE ◽  
Tetsuya ASAI ◽  
Yoshihito AMEMIYA
Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 563
Author(s):  
Jorge Pérez-Bailón ◽  
Belén Calvo ◽  
Nicolás Medrano

This paper presents a new approach based on the use of a Current Steering (CS) technique for the design of fully integrated Gm–C Low Pass Filters (LPF) with sub-Hz to kHz tunable cut-off frequencies and an enhanced power-area-dynamic range trade-off. The proposed approach has been experimentally validated by two different first-order single-ended LPFs designed in a 0.18 µm CMOS technology powered by a 1.0 V single supply: a folded-OTA based LPF and a mirrored-OTA based LPF. The first one exhibits a constant power consumption of 180 nW at 100 nA bias current with an active area of 0.00135 mm2 and a tunable cutoff frequency that spans over 4 orders of magnitude (~100 mHz–152 Hz @ CL = 50 pF) preserving dynamic figures greater than 78 dB. The second one exhibits a power consumption of 1.75 µW at 500 nA with an active area of 0.0137 mm2 and a tunable cutoff frequency that spans over 5 orders of magnitude (~80 mHz–~1.2 kHz @ CL = 50 pF) preserving a dynamic range greater than 73 dB. Compared with previously reported filters, this proposal is a competitive solution while satisfying the low-voltage low-power on-chip constraints, becoming a preferable choice for general-purpose reconfigurable front-end sensor interfaces.


Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.


Author(s):  
Lukas Nagy ◽  
Viera Stopjakova ◽  
Daniel Arbet ◽  
Miroslav Potocny ◽  
Martin Kovac

Author(s):  
Urvashi Bansal ◽  
Maneesha Gupta ◽  
Niranjan Raj

The importance of a transimpedance amplifier in an optical transceiver is very well known. In this paper, a novel CMOS design of the bulk-driven transimpedance amplifier (BD-TIA) is given where the bridge-shunt peaking-based frequency compensation technique is exploited to improve frequency response. A pre-existing active inductor has been used for the same. The electrical characteristics and functioning of this inductor simulator make it a suitable alternative to both floating and grounded spiral inductors. In order to verify the workability of the proposed circuit, it has been simulated with TSMC CMOS 0.18[Formula: see text][Formula: see text]m process parameters. The proposed circuit is useful in low-voltage low-power VLSI applications as it uses a single supply of 0.75[Formula: see text]V. The power consumption of BD-TIA is very low, being 0.37[Formula: see text]mW, because a standard MOSFET has been replaced by a bulk-driven MOSFET (BDMOS), while the 3-dB bandwidth is observed to be 4.5[Formula: see text]GHz. The mathematical investigation and small signal analysis show that the simulation results are in good agreement.


2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Zaizai Dong ◽  
Yanli Jiao ◽  
Bingteng Xie ◽  
Yongcun Hao ◽  
Pan Wang ◽  
...  

Abstract Conventional electroporation approaches show limitations in the delivery of macromolecules in vitro and in vivo. These limitations include low efficiency, noticeable cell damage and nonuniform delivery of cells. Here, we present a simple 3D electroporation platform that enables massively parallel single-cell manipulation and the intracellular delivery of macromolecules and small molecules. A pyramid pit micropore array chip was fabricated based on a silicon wet-etching method. A controllable vacuum system was adopted to trap a single cell on each micropore. Using this chip, safe single-cell electroporation was performed at low voltage. Cargoes of various sizes ranging from oligonucleotides (molecular beacons, 22 bp) to plasmid DNA (CRISPR-Cas9 expression vectors, >9 kb) were delivered into targeted cells with a significantly higher transfection efficiency than that of multiple benchmark methods (e.g., commercial electroporation devices and Lipofectamine). The delivered dose of the chemotherapeutic drug could be controlled by adjusting the applied voltage. By using CRISPR-Cas9 transfection with this system, the p62 gene and CXCR7 gene were knocked out in tumor cells, which effectively inhibited their cellular activity. Overall, this vacuum-assisted micropore array platform provides a simple, efficient, high-throughput intracellular delivery method that may facilitate on-chip cell manipulation, intracellular investigation and cancer therapy.


2018 ◽  
Vol 71 ◽  
pp. 37-46 ◽  
Author(s):  
Behnam Abdollahi ◽  
Baset Mesgari ◽  
Saeed Saeedi ◽  
Abdolreza Nabavi

2009 ◽  
Vol 30 (3) ◽  
pp. 035008
Author(s):  
Wang Hui ◽  
Wang Songlin ◽  
Lai Xinquan ◽  
Ye Qiang ◽  
Mou Zaixin ◽  
...  
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