Enhancement of optical properties of titanium dioxide with doping in THz regime

Author(s):  
Muhammad Mumtaz ◽  
M. Ahsan Mahmood ◽  
Sabih D. Khan ◽  
M. Aslam Zia ◽  
Mushtaq Ahmed ◽  
...  
2013 ◽  
Vol 452 (1) ◽  
pp. 211-214 ◽  
Author(s):  
O. I. Gyrdasova ◽  
I. V. Baklanova ◽  
M. A. Melkozerova ◽  
V. N. Krasil’nikov ◽  
V. G. Bamburov

2018 ◽  
Vol 32 (09) ◽  
pp. 1850076 ◽  
Author(s):  
Irfan Ullah ◽  
Shaukat Ali Khattak ◽  
Tanveer Ahmad ◽  
Saman ◽  
Nayab Ali Ludhi

The titanium dioxide (TiO2) is synthesized by sol–gel method using titanium-tetra-iso-propoxide (TTIP) as a starting material, and deposited on the pre-cleaned glass substrate using spin coating technique at optimized parameters. Energy dispersive X-ray (EDX) spectroscopy confirms successful TiO2 growth. The optical properties concerning the transmission and absorption spectra show 85% transparency and 3.28 eV wide optical band gap for indirect transition, calculated from absorbance. The exponential behavior of absorption edge is observed and attributed to the localized states electronic transitions, curtailed in the indirect band gap of the thin film. The film reveals decreasing refractive index with increasing wavelength. The photoluminescence (PL) study ascertains that luminescent properties are due to the surface defects.


2021 ◽  
pp. 227-242
Author(s):  
Rani George ◽  
Sunil Thomas ◽  
P.R. Biju ◽  
N. V. Unnikrishnan ◽  
C. Sudarsanakumar

MRS Advances ◽  
2019 ◽  
Vol 4 (11-12) ◽  
pp. 661-666
Author(s):  
L. Ajith DeSilva ◽  
Sarahn Nazaret ◽  
A. G. U. Perera ◽  
T. M. W. J. Bandara

ABSTRACTOne-dimensional hybrid Distributed Bragg Reflector (DBR) is constructed using Tris (8-hydroxy) quinoline aluminum (Alq3) molecules and Titanium dioxide (TiO2) nanoparticles via spin coating process. Light emission from thin films of low molecular weight organic semiconductor of Alq3 is dominated by excitons. This material has been widely used as a superior emitter for organic light emitting diodes. Titanium dioxide (TiO2) is an inorganic semiconductor with a high band gap. Photoluminescence (PL) of thin films of Alq3 showed a broad PL peak at 530 nm. In DBR structures, PL quenching is observed but there is no shift in the PL peak of the Alq3. The PL quenching is tentatively attributed to energy transfer via sensitization to wide band gap TiO2 layers. A simple excitonic model is suggested to explain the observation. Fabrication process and optical properties of the structure are presented.


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