Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs

2018 ◽  
Author(s):  
D. P. Ioannou ◽  
Y. Tan ◽  
R. Logan ◽  
K. Bandy ◽  
R. Achanta ◽  
...  
Keyword(s):  
Performance Degradation ◽  
Hot Carrier ◽  
Hot Carrier Effects ◽  
Rf Performance

RF performance degradation in nMOS transistors due to hot carrier effects

2000 ◽  
Vol 47 (5) ◽  
pp. 1068-1072 ◽  
Author(s):  
Jong-Tae Park ◽  
Byung-Jin Lee ◽  
Dong-Wook Kim ◽  
Chong-Gun Yu ◽  
Hyun-Kyu Yu
Keyword(s):  
Performance Degradation ◽  
Hot Carrier ◽  
Hot Carrier Effects ◽  
Rf Performance ◽  
Nmos Transistors

RF CMOS RELIABILITY

2001 ◽  
Vol 11 (04) ◽  
pp. 1249-1295 ◽  
Author(s):  
SASAN NASEH ◽  
M. JAMAL DEEN
Keyword(s):  
Circuit Simulation ◽  
Low Noise ◽  
Rf Cmos ◽  
Carrier Generation ◽  
Hot Carrier ◽  
Rf Cmos Circuits ◽  
Noise Amplifier ◽  
Hot Carrier Effects ◽  
Rf Performance ◽  
Nmos Transistors

In this chapter the effects of hot carrier on the reliability of NMOS transistors are investigated. First, it is explained why the hot carrier issue can be important in RF CMOS circuits. Important mechanisms of hot carrier generation are reviewed and some of the techniques used in the measurement of hot carrier damages are explained. Next, results of measurement of DC hot carrier stress on the NMOS transistors are presented. The main focus here is the RF performance of the NMOS devices and circuits mode of them, but DC parameters of the device such as its I-V characteristics and threshold voltage are presented, as they directly affect the RF performance. Finally, using the measurements of hot carrier effects on single NMOS transistors, the effects of hot carriers on three parameters of a low noise amplifier, matching, power gain and stability, are predicted using circuit simulation.

Comparison of hot carrier-induced RF performance degradation in H-gate and T-gate SOI MOSFETs

2005 ◽  
Vol 26 (2) ◽  
pp. 112-114 ◽  
Author(s):  
Byung-Jin Lee ◽  
Jang-Woo Park ◽  
Kyosun Kim ◽  
Chong-Gun Yu ◽  
Jong-Tae Park
Keyword(s):  
Performance Degradation ◽  
Hot Carrier ◽  
Rf Performance

S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects

2011 ◽  
Vol 51 (9-11) ◽  
pp. 1551-1556
Author(s):  
M.A. Belaïd ◽  
M. Gares ◽  
K. Daoud ◽  
Ph. Eudeline
Keyword(s):  
Performance Degradation ◽  
Hot Carrier ◽  
S Parameter ◽  
Hot Carrier Effects

Hot Carrier Effects in Deep Submicron Nmosfets

1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha
Keyword(s):  
Electric Fields ◽  
Channel Length ◽  
Deep Submicron ◽  
Short Channel ◽  
Hot Carrier ◽  
Velocity Saturation ◽  
Substrate Current ◽  
Hot Carrier Effects ◽  
Saturation Effects ◽  
Channel Lengths

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

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