A floating-gate transistor based continuous-time analog adaptive filter

This paper presents different low voltage adjustable CMOS Schmitt trigger using DCG-FGT transistor. Simple circuits are introduced to provide flexibility to program the hysteresic threshold in this paper. The hysteresis can be controlled accurately at a large voltage range. The proposed Schmitt trigger have been designed using 90nm 1.2V CMOS technology and simulated using Eldo with PSP device models. The simulation results show rail-to-rail operation and adjustable switching voltages VTH- (low switching voltage) and VTH+ (high switching voltage).

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A Smart Floating Gate Transistor with Two Control Gates for Active Noise Control

Micromachines ◽

10.3390/mi10110722 ◽

2019 ◽

Vol 10 (11) ◽

pp. 722

Author(s):

Mao ◽

Yang ◽

Ma ◽

Yan ◽

Zhang

Keyword(s):

Large Scale ◽

Noise Control ◽

Low Cost ◽

Active Noise Control ◽

Complementary Metal Oxide Semiconductor ◽

Floating Gate ◽

Oxide Semiconductor ◽

Cmos Process ◽

Active Noise ◽

Floating Gate Transistor

A smart floating gate transistor with two control gates was proposed for active noise control in bioelectrical signal measurement. The device, which is low cost and capable of large-scale integration, was implemented in a standard single-poly complementary metal–oxide–semiconductor (CMOS) process. A model of the device was developed to demonstrate the working principle. Theoretical analysis and simulation results proved the superposition of the two control gates. A series of test experiments were carried out and the results showed that the device was in accordance with the basic electrical characteristics of a floating gate transistor, including the current–voltage (I–V) characteristics and the threshold characteristics observed on the two control gates. Based on the source follower circuit, the experimental results proved that the device can reduce interference by more than 29 dB, which demonstrates the feasibility of the proposed device for active noise control.

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Design and simulation equivalent model of Floating Gate Transistor

2015 Annual IEEE India Conference (INDICON) ◽

10.1109/indicon.2015.7443252 ◽

2015 ◽

Author(s):

Birinderjit Singh Kalyan ◽

Balwinder Singh

Keyword(s):

Floating Gate ◽

Equivalent Model ◽

Floating Gate Transistor

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Quantum Dot Floating Gate Transistor with Multi-wall Carbon Nano Tube Channel for Non-volatile Memory Devices

2012 International Conference on Communication Systems and Network Technologies ◽

10.1109/csnt.2012.169 ◽

2012 ◽

Cited By ~ 1

Author(s):

Rajeswari Joga

Keyword(s):

Quantum Dot ◽

Floating Gate ◽

Memory Devices ◽

Floating Gate Transistor ◽

Non Volatile Memory ◽

Volatile Memory ◽

Carbon Nano Tube ◽

Tube Channel

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A floating-gate memory cell for continuous-time programming

2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) ◽

10.1109/mwscas.2012.6291995 ◽

2012 ◽

Cited By ~ 7

Author(s):

Brandon Rumberg ◽

David W. Graham

Keyword(s):

Continuous Time ◽

Memory Cell ◽

Floating Gate ◽

Floating Gate Memory

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On the detectability of CMOS floating gate transistor faults

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ◽

10.1109/43.905680 ◽

2001 ◽

Vol 20 (1) ◽

pp. 116-128 ◽

Cited By ~ 10

Author(s):

A. Ivanov ◽

S. Rafiq ◽

M. Renovell ◽

F. Azais ◽

Y. Bertrand

Keyword(s):

Floating Gate ◽

Floating Gate Transistor

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Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor

E3S Web of Conferences ◽

10.1051/e3sconf/202018504071 ◽

2020 ◽

Vol 185 ◽

pp. 04071

Author(s):

Sheng Sun ◽

Shengdong Zhang

Keyword(s):

Nonvolatile Memory ◽

Thin Film Transistor ◽

Floating Gate ◽

Pmma Film ◽

Organic Thin Film ◽

Simple Method ◽

Solution Processed ◽

Floating Gate Transistor ◽

Electron Carriers ◽

Bipolar Semiconductor

Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.

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