A 442.1 nVpp , 13.07 ppm/°C ultra-low noise bandgap reference circuit in 180 nm BCD process

2021 ◽  
Author(s):  
Junjun Zou ◽  
Qi Wei ◽  
Bin Zhou ◽  
Xiang Li ◽  
Chunge Ju ◽  
...  
Keyword(s):  
Low Noise ◽  
Bandgap Reference ◽  
Reference Circuit ◽  
Ultra Low Noise

Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

2021 ◽  
Vol 42 (4) ◽  
pp. 469-472
Author(s):  
Yingtao Yu ◽  
Si Chen ◽  
Qitao Hu ◽  
Paul Solomon ◽  
Zhen Zhang
Keyword(s):  
Silicon Nanowire ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Schottky Junction ◽  
Ultra Low Noise ◽  
Insulator Substrate

Ultra low noise all niobium DC-SQUIDs

1991 ◽  
Vol 27 (2) ◽  
pp. 2997-3000 ◽  
Author(s):  
G.M. Daalmans ◽  
L. Bar ◽  
F.R. Bommel ◽  
R. Kress ◽  
D. Uhl
Keyword(s):  
Low Noise ◽  
Ultra Low Noise

A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C

2014 ◽  
Vol 981 ◽  
pp. 66-69
Author(s):  
Ming Yuan Ren ◽  
En Ming Zhao
Keyword(s):  
Power Supply ◽  
Process Simulation ◽  
Output Voltage ◽  
Operating Temperature ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Analysis Method ◽  
Operation Condition ◽  
Reference Circuit ◽  
Simulation Results

This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

scholarly journals Characterizing the optical response of ultra-low-noise far-infrared 60–110 μm transition edge sensors

2020 ◽  
Vol 91 (12) ◽  
pp. 123104
Author(s):  
E. A. Williams ◽  
S. Withington ◽  
D. J. Goldie ◽  
C. N. Thomas ◽  
P. A. R. Ade ◽  
...  
Keyword(s):  
Far Infrared ◽  
Optical Response ◽  
Transition Edge Sensors ◽  
Low Noise ◽  
Transition Edge ◽  
Ultra Low Noise
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