0.18 μm double-recessed III-nitride metal-oxide double heterostructure field-effect transistors
2008 ◽
Vol 55
(2)
◽
pp. 495-499
◽
2020 ◽
Vol 8
◽
pp. 9-14
◽
2005 ◽
Vol 2
(7)
◽
pp. 2651-2654
◽
2001 ◽
Vol 188
(1)
◽
pp. 219-222
◽
2016 ◽
Vol 5
(12)
◽
pp. Q284-Q288
◽