High temperature static and dynamic characteristics of 3.7 kV high voltage 4H-SiC JBS

2002 ◽  
Author(s):  
K. Asano ◽  
T. Hayashi ◽  
R. Saito ◽  
Y. Sugawara
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Dynamic Characteristics ◽  
Static And Dynamic Characteristics

Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

2017 ◽  
Vol 897 ◽  
pp. 501-504 ◽  
Author(s):  
Si Yang Liu ◽  
Yi Fan Jiang ◽  
Woong Je Sung ◽  
Xiao Qing Song ◽  
B. Jayant Baliga ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Dynamic Characteristics ◽  
Analytical Models ◽  
Harsh Environments ◽  
Device Physics ◽  
Dynamic Parameters ◽  
Power Mosfets ◽  
Static And Dynamic Characteristics ◽  
Temperature Capability

High temperature capability of silicon carbide (SiC) power MOSFETs is becoming more important as power electronics faces wider applications in harsh environments. In this paper, comprehensive static and dynamic parameters of 1.2 kV SiC MOSFETs have been measured up to 250°C. The electrical behaviors with the temperature have been analyzed using the basic device physics and analytical models.

Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices

2005 ◽  
Author(s):  
F. Bauer ◽  
T. Stockmeier ◽  
H. Lendenmann ◽  
H. Dettmer ◽  
W. Fichtner
Keyword(s):  
High Voltage ◽  
Dynamic Characteristics ◽  
Static And Dynamic Characteristics

Static and Dynamic Characteristics of SiC MOSFETs and SBDs for 3.3 kV 400 A Full SiC Modules

2015 ◽  
Vol 821-823 ◽  
pp. 592-595 ◽  
Author(s):  
Keiji Wada ◽  
Hideto Tamaso ◽  
Satomi Itoh ◽  
Kenji Kanbara ◽  
Toru Hiyoshi ◽  
...  
Keyword(s):  
Power Systems ◽  
High Voltage ◽  
Dynamic Characteristics ◽  
Static Characteristics ◽  
Drain Voltage ◽  
Inductive Load ◽  
Static And Dynamic Characteristics ◽  
Edge Termination ◽  
Turn On ◽  
Igbt Modules

Characteristics of SiC MOSFETs and SBDs with 3.3 kV-class have been presented. Static Characteristics of the MOSFET showed a specific on-resistance of 14.2 mΩ cm2. A breakdown voltage of 3850 V is obtained by using the dose optimized edge termination structure as we have previously reported [1]. At the same time, reverse leakage current of the 3.3 kV SiC SBDs can be suppressed by the JBS structure and the edge termination which is also used in the MOSFETs. By using the MOSFETs and SBDs, we have demonstrated the superior capability of the 3.3 kV 400 A full SiC 2 in 1 modules with a compatible case and terminal configurations to Si IGBT modules. Dynamic characteristics of the full SiC module in an inductive load switching exhibits superior turn-on and turn-off properties even at a high drain voltage of 1650 V, demonstrating the availability of high voltage SiC power systems.

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed

2017 ◽  
Vol 897 ◽  
pp. 521-524 ◽  
Author(s):  
Q.J. Zhang ◽  
G. Wang ◽  
Charlotte Jonas ◽  
Craig Capell ◽  
Steve Pickle ◽  
...  
Keyword(s):  
Detailed Analysis ◽  
High Voltage ◽  
Dynamic Characteristics ◽  
High Power ◽  
Switching Speed ◽  
Static And Dynamic Characteristics ◽  
Medium Voltage ◽  
Fast Switching ◽  
High Switching Speed ◽  
Fast Switching Speed

Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2nd Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET development. A low specific on-resistance of 4.7 mΩ⋅cm2 has been achieved on 1700 V, 20 mΩ 4H-SiC DMOSFETs at 250°C based on a 3rd generation planar MOSFET platform, which is less than half of the resistance of the previous generation devices. A detailed analysis has been carried out with respect to the static and dynamic characteristics, third quadrant conduction, and body diode reverse recovery charge, etc.

High-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 786-789 ◽  
Author(s):  
Vladimir A. Ilyin ◽  
Alexey V. Afanasyev ◽  
Boris V. Ivanov ◽  
Alexey F. Kardo-Sysoev ◽  
Victor V. Luchinin ◽  
...  
Keyword(s):  
High Voltage ◽  
Dynamic Characteristics ◽  
Leading Edge ◽  
Edge Length ◽  
Static And Dynamic Characteristics ◽  
Switching Performance ◽  
Bandgap Narrowing ◽  
Heavily Doped ◽  
Simulation Results ◽  
Fast Pulse

The paper reports on the results of the studies of static and dynamic characteristics of 4H-SiC drift step recovery diodes (DSRDs) assembled in diode stacks. Switching performance of single dies has been simulated and experimentally confirmed. It was established that the switching process is determined primarily by the incomplete ionization of acceptors in 4H-SiC and by the bandgap narrowing in heavily doped emitters. Based on the simulation results the optimized die size has been selected. For DSRD stacks of 4 and 8 dies I-V and C-V measurements are reported. The stacks were dynamically tested in a special oscillator circuit. Repetitive voltage pulses of 10.5 kV with the leading edge length of 900 ps were demonstrated.

Impact of proton irradiation on the static and dynamic characteristics of high-voltage 4h-sic jbs switching diodes

2003 ◽  
Vol 50 (6) ◽  
pp. 1821-1826 ◽  
Author(s):  
Zhiyun Luo ◽  
Tianbing Chen ◽  
J.D. Cressler ◽  
D.C. Sheridan ◽  
J.R. Williams ◽  
...  
Keyword(s):  
High Voltage ◽  
Dynamic Characteristics ◽  
Proton Irradiation ◽  
Static And Dynamic Characteristics

Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power

2018 ◽  
Vol 924 ◽  
pp. 858-861 ◽  
Author(s):  
Taiga Goto ◽  
Takuma Shirai ◽  
Akira Tokuchi ◽  
Takashi Naito ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Dynamic Characteristics ◽  
Voltage Pulse ◽  
High Speed ◽  
Pulse Power ◽  
Experimental Demonstration ◽  
Static And Dynamic Characteristics ◽  
First Time ◽  
Drift Layer

This paper presents the experimental results of static and dynamic characteristics of the newly developed 14 kV 4H-SiC high-speed drift step recovery diode (DSRD) for pulse power applications for the first time. The feature of the diode structure is to be designed based upon the p+/p-/n+ structure and is to make an additional extremely low doping and thin n-drift layer between the p-drift layer and n+ substrate. This device successfully exhibits higher breakdown voltage of 14kV and high-speed voltage pulse in a range of a few nanoseconds, simultaneously.

An Environmental Wet Cell For High Voltage Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 18-19
Author(s):  
N.J. Tighe ◽  
H.M. Flower ◽  
P.R. Swann
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Image Quality ◽  
Inelastic Scattering ◽  
High Voltage ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Environmental Cell ◽  
Water Saturated ◽  
High Temperature Gas

A differentially pumped environmental cell has been developed for use in the AEI EM7 million volt microscope. In the initial version the column of gas traversed by the beam was 5.5mm. This permited inclusion of a tilting hot stage in the cell for investigating high temperature gas-specimen reactions. In order to examine specimens in the wet state it was found that a pressure of approximately 400 torr of water saturated helium was needed around the specimen to prevent dehydration. Inelastic scattering by the water resulted in a sharp loss of image quality. Therefore a modified cell with an ‘airgap’ of only 1.5mm has been constructed. The shorter electron path through the gas permits examination of specimens at the necessary pressure of moist helium; the specimen can still be tilted about the side entry rod axis by ±7°C to obtain stereopairs.

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