Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

2017 ◽  
Vol 897 ◽  
pp. 501-504 ◽  
Author(s):  
Si Yang Liu ◽  
Yi Fan Jiang ◽  
Woong Je Sung ◽  
Xiao Qing Song ◽  
B. Jayant Baliga ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Dynamic Characteristics ◽  
Analytical Models ◽  
Harsh Environments ◽  
Device Physics ◽  
Dynamic Parameters ◽  
Power Mosfets ◽  
Static And Dynamic Characteristics ◽  
Temperature Capability

High temperature capability of silicon carbide (SiC) power MOSFETs is becoming more important as power electronics faces wider applications in harsh environments. In this paper, comprehensive static and dynamic parameters of 1.2 kV SiC MOSFETs have been measured up to 250°C. The electrical behaviors with the temperature have been analyzed using the basic device physics and analytical models.

Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures

2018 ◽  
Vol 924 ◽  
pp. 719-722 ◽  
Author(s):  
Si Yang Liu ◽  
B. Jayant Baliga ◽  
Yi Fan Jiang ◽  
Wei Feng Sun ◽  
Subhashish Bhattacharya ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Temperatures ◽  
Industrial Application ◽  
Analytical Models ◽  
Harsh Environments ◽  
Device Physics ◽  
Dynamic Parameters ◽  
Power Mosfets ◽  
Silicon Devices

Silicon Carbide (SiC) power MOSFETs become more important in 10kV industrial application level, beginning to replace the silicon devices. Due to the harsh environments, high temperature performances of 10kV SiC MOSFETs must be concerned and understood. In this paper, comprehensive static and dynamic parameters of 10kV SiC MOSFETs have been measured up to 225°C. The device physics behind high temperature behaviors has been analyzed by using the basic analytical models.

scholarly journals Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

2019 ◽  
Vol 9 (2) ◽  
pp. 1453
Author(s):  
Ramani Kannan ◽  
Saranya Krishnamurthy ◽  
Chay Che Kiong ◽  
Taib B Ibrahim
Keyword(s):  
Silicon Carbide ◽  
Dynamic Characteristics ◽  
Gamma Ray ◽  
Electronic Devices ◽  
Dose Effect ◽  
Power Electronic ◽  
Switching Speed ◽  
Power Mosfet ◽  
Power Mosfets ◽  
Gamma Ray Irradiation

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

High temperature 4H-silicon carbide thyristors and power MOSFETs

1996 ◽  
Author(s):  
John W. Palmour ◽  
Scott T. Allen ◽  
Ranbir Singh ◽  
Lori A. Lipkin ◽  
Douglas G. Waltz
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Mosfets

High-temperature tolerance of the piezoresistive effect in p-4H-SiC for harsh environment sensing

2018 ◽  
Vol 6 (32) ◽  
pp. 8613-8617 ◽  
Author(s):  
Tuan-Khoa Nguyen ◽  
Hoang-Phuong Phan ◽  
Toan Dinh ◽  
Abu Riduan Md Foisal ◽  
Nam-Trung Nguyen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Stability ◽  
Temperature Tolerance ◽  
Harsh Environments ◽  
Harsh Environment ◽  
Piezoresistive Effect ◽  
High Temperature Tolerance ◽  
Chemical Inertness ◽  
Silicon Based

4H-silicon carbide based sensors are promising candidates for replacing prevalent silicon-based counterparts in harsh environments owing to their superior chemical inertness, high stability and reliability.

Simulation of silicon carbide power MOSFETs at high temperature

1999 ◽  
Vol 43 (2) ◽  
pp. 367-374 ◽  
Author(s):  
S.F Shams ◽  
K.B Sundaram ◽  
L.C Chow
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Mosfets

High Temperature Capability of High Voltage 4H-SiC JBS

2012 ◽  
Vol 711 ◽  
pp. 124-128 ◽  
Author(s):  
Maxime Berthou ◽  
Philippe Godignon ◽  
Bertrand Vergne ◽  
Pierre Brosselard
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Leakage Current ◽  
High Voltage ◽  
Room Temperature ◽  
Operating Temperature ◽  
Reverse Current ◽  
Temperature Capability ◽  
Schottky Devices ◽  
Current Behaviour

This paper presents the high blocking capability of the 4H-SiC tungsten Schottky and junction barrier Schottky (JBS) diodes at room temperature as well as at high operating temperature. First, we present the design of the proposed devices and the process employed for their fabrication. In a second part, their forward and reverse characteristics at room temperature will be presented. Our rectifiers exhibit blocking capability up to 9kV at room temperature. Then, we investigate the reverse current behaviour at 5kV from room temperature to 250°C under vacuum. JBS and Schottky devices that are capable to block 8kV at room temperature, show leakage current inferior to 100µA at 250°C when reverse biased at 5kV. It confirms the capability of Silicon Carbide to produce devices capable of operation at temperatures and voltages above the Silicon limits.

scholarly journals Thermal Runaway Robustness of SiC VJFETs

2013 ◽  
Vol 740-742 ◽  
pp. 929-933 ◽  
Author(s):  
Rémy Ouaida ◽  
Cyril Buttay ◽  
Anhdung Hoang ◽  
Raphaël Riva ◽  
Dominique Bergogne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cooling System ◽  
Thermal Runaway ◽  
Temperature Capability ◽  
Junction Field Effect Transistors

Silicon Carbide (SiC) Junction-Field Effect Transistors (JFETs) are attractive devices for power electronics. Their high temperature capability should allow them to operate with a reduced cooling system. However, experiments described in this paper conclude to the existence of runaway conditions in which these transistors will reach destructive temperatures.

Extreme Service Packaging for Silicon Carbide Electronic Devices

2004 ◽  
Vol 815 ◽  
Author(s):  
Maxime J. F. Guinel ◽  
Diego Rodriguez-Marek ◽  
M. Grant Norton ◽  
Robert B. Davis ◽  
David F. Bahr
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Thermal Degradation ◽  
Single Crystal ◽  
Power Electronics ◽  
High Power ◽  
Electronic Devices ◽  
Good Choice ◽  
Harsh Environments ◽  
Single Crystal Sic

AbstractElectronic devices based on single crystal SiC represent a good choice for a variety of new high temperature, high power electronics applications. The challenge is to develop a package that is resistant to thermal degradation in harsh environments. Conditions are extreme and this all but rules out only a handful of materials and materials systems. Polycrystalline SiC is the material that we have chosen to study as a suitable package and materials suitability/compatibility has been considered on several levels.

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