A compact CMOS MEMS microphone with 66dB SNR

Author(s):  
J. Citakovic ◽  
P.F. Hovesten ◽  
G. Rocca ◽  
A. van Halteren ◽  
P. Rombach ◽  
...  
Keyword(s):  
2015 ◽  
Vol 40 (4) ◽  
pp. 527-537 ◽  
Author(s):  
Farès Tounsi ◽  
Brahim Mezghani ◽  
Libor Rufer ◽  
Mohamed Masmoudi

Abstract This paper gives a detailed electroacoustic study of a new generation of monolithic CMOS micromachined electrodynamic microphone, made with standard CMOS technology. The monolithic integration of the mechanical sensor with the electronics using a standard CMOS process is respected in the design, which presents the advantage of being inexpensive while having satisfactory performance. The MEMS microphone structure consists mainly of two planar inductors which occupy separate regions on substrate. One inductor is fixed; the other can exercise out-off plane movement. Firstly, we detail the process flow, which is used to fabricate our monolithic microphone. Subsequently, using the analogy between the three different physical domains, a detailed electro-mechanical-acoustic analogical analysis has been performed in order to model both frequency response and sensitivity of the microphone. Finally, we show that the theoretical microphone sensitivity is maximal for a constant vertical position of the diaphragm relative to the substrate, which means the distance between the outer and the inner inductor. The pressure sensitivity, which is found to be of the order of a few tens of μV/Pa, is flat within a bandwidth from 50 Hz to 5 kHz.


2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.


2021 ◽  
pp. 1-1
Author(s):  
Pramod Martha ◽  
Naveen Kadayinti ◽  
V. Seena
Keyword(s):  

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