Study on Lithography Defect Reduction for 19nm NAND SADP Process

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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Defect Reduction in Ring Blank Casting Through Design of Experiments

International Review of Mechanical Engineering (IREME) ◽

10.15866/ireme.v9i6.7627 ◽

2015 ◽

Vol 9 (6) ◽

pp. 536 ◽

Cited By ~ 1

Author(s):

P. Kannan ◽

K. Balasubramanian ◽

R. Vinayagamoorthy

Keyword(s):

Design Of Experiments ◽

Defect Reduction ◽

Ring Blank

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Construction of Defect Reduction System by Improving Wet-end Chemical Retention

JAPAN TAPPI JOURNAL ◽

10.2524/jtappij.74.309 ◽

2020 ◽

Vol 74 (4) ◽

pp. 309-315

Author(s):

Hiroyuki Oishi ◽

Koichi Tadaki ◽

Kazutaka Kasuga

Keyword(s):

Defect Reduction ◽

Reduction System ◽

Chemical Retention

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Methodology to Correlate Defect Reduction Systems to Electrical Test Data via Artificially Manufactured Defects

ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2002p0587 ◽

2002 ◽

Author(s):

Mike Santana ◽

Alfredo V. Herrera

Keyword(s):

Test Data ◽

Learning Opportunities ◽

Inspection System ◽

Navigation Systems ◽

Defect Inspection ◽

Defect Reduction ◽

Electrical Test ◽

Important System

Abstract This paper describes a methodology for correlating physical defect inspection/navigation systems with electrical bitmap data through the fabrication of artificial defects via reticle alterations or circuit modifications using an inline FIB. The methodology chosen consisted of altering decommissioned reticles to create defects resulting in both open and shorted circuits within areas of an AMD microprocessor cache. The reticles were subsequently scanned using a KLA SL300HR StarLight inspection system to confirm their location, while wafers processed on these reticles were scanned at several layers using standard inline metrology. Finally, the wafers were electrically tested, bitmapped, and physically deprocessed. All defect data was then analyzed and cross-correlated between each system, uncovering some important system deficiencies and learning opportunities. Data and images are included to support the significance and effectiveness of such a methodology.

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Intel® Component Diagnostic Technology: Tools and Education for Intel Component Defect Reduction

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0139 ◽

2004 ◽

Author(s):

Julie S. Doll

Keyword(s):

User Interface ◽

Data Management ◽

Contract Manufacturing ◽

Defect Reduction ◽

Web Based ◽

Technology Tools ◽

Diagnostic Capability ◽

Diagnostic Technology

Abstract To enable efficient, accurate debug of Intel architecture components to take place within contract manufacturing sites, and to provide alternatives for the removal of Intel components from, Intel is deploying a diagnostic capability and attendant educational collateral known as to achieve these objectives Intel® Component Diagnostic Technology. This paper will describe details of Intel® Component Diagnostic Technology, including the diagnostic fixture and user interface, diagnostic scripts and analytical coverage, data management and reporting, and on-site and Web-based educational offerings.

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Defect reduction using new digital valve dispensing technology

10.1117/12.768951 ◽

2008 ◽

Author(s):

Garrett Standley ◽

John Kasson ◽

Brian Kidd

Keyword(s):

Defect Reduction

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Understanding the role of Se in defect reduction in CdTe photovoltaics

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc45281.2020.9300533 ◽

2020 ◽

Author(s):

Chuang Li ◽

Xia Hao ◽

Jingquan Zhang ◽

Lili Wu ◽

Wei Li ◽

...

Keyword(s):

Defect Reduction

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Microstructural defect reduction in HgCdTe grown by photoassisted molecular‐beam epitaxy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576998 ◽

1990 ◽

Vol 8 (2) ◽

pp. 1013-1019 ◽

Cited By ~ 28

Author(s):

K. A. Harris ◽

T. H. Myers ◽

R. W. Yanka ◽

L. M. Mohnkern ◽

R. W. Green ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Defect Reduction ◽

Microstructural Defect

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TEM investigation of defect reduction and etch pit formation in GaN

MRS Proceedings ◽

10.1557/proc-798-y5.22 ◽

2003 ◽

Vol 798 ◽

Author(s):

Angelika Vennemann ◽

Jens Dennemarck ◽

Roland Kröger ◽

Tim Böttcher ◽

Detlef Hommel ◽

...

Keyword(s):

Electron Microscopy ◽

Dislocation Density ◽

Line Tension ◽

Threading Dislocations ◽

Dislocation Loops ◽

Etch Pits ◽

Defect Reduction ◽

Transmission Electron ◽

Order Of Magnitude ◽

Edge Dislocations

ABSTRACTGaN samples of this study were chemically wet etched to gain easier access to the dislocation sturcture. The scanning electron microscopy and transmission electron microscopy investigations revealed four different types of etch pits. After brief etching, several dislocations with screw component showed large etch pits, which may be correlated with the core of the screw dislocation. By means of SiNx micromasking the dislocation density could be reduced by more than one order of magnitude. The reduction of threading dislocations in the SiNx region in GaN grown on 〈0001〉 sapphire is due to bending of the threading dislocations into the {0001} plane, such that they form dislocation loops if they meet dislocations with opposite Burgers vectors. Accordingly, the achievable reduction of the dislocation density is limited by the probability that these dislocations interact. Edge dislocations bend more easily on account of their low line tension. This results in a preferential bending and reduction of dislocations with edge character.

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