GaN-Based Light-Emitting Diodes With AlGaN Strain Compensation Buffer Layer

2013 ◽  
Vol 9 (11) ◽  
pp. 910-914 ◽  
Author(s):  
Shoou-Jinn Chang ◽  
Lucent Lu ◽  
Yu-Yao Lin ◽  
Shuguang Li
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Strain Compensation

scholarly journals Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 399
Author(s):  
Sang-Jo Kim ◽  
Semi Oh ◽  
Kwang-Jae Lee ◽  
Sohyeon Kim ◽  
Kyoung-Kook Kim
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Defect Density ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Growth Interruption ◽  
Aln Buffer

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

AlyGa1−yAs Bound GazIn1−zP Strain Compensation for Optical Enhancement of In0.07GaAs/GaAs1−xPx 940-nm Light-Emitting Diodes

2019 ◽  
Vol 75 (1) ◽  
pp. 80-86
Author(s):  
Hyung-Joo Lee ◽  
Jin-Su So ◽  
Hong-Gun Kim ◽  
Lee-Ku Kwac ◽  
Won-Chan An
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Strain Compensation

High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L226-L228 ◽  
Author(s):  
Baijun Zhang ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Yang Liu ◽  
Takashi Jimbo
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Algan Buffer

Balanced Strain Compensation of In0.07GaAs/Al0.2GaAs/GaAsP0.06 for Improving 940 nm Infrared Light-Emitting Diodes

2019 ◽  
Vol 19 (4) ◽  
pp. 2224-2227
Author(s):  
Won-Chan An ◽  
Hong-Gun Kim ◽  
Lee-Ku Kwac ◽  
Jin-Su So ◽  
Hyung-Joo Lee
Keyword(s):  
Light Emitting Diodes ◽  
Infrared Light ◽  
Light Emitting ◽  
Strain Compensation

Transparent organic light-emitting diodes using metal acethylacetonate complexes as an electron injective buffer layer

2001 ◽  
Vol 78 (21) ◽  
pp. 3343-3345 ◽  
Author(s):  
Asuka Yamamori ◽  
Sachiko Hayashi ◽  
Toshiki Koyama ◽  
Yoshio Taniguchi
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light

Organic-Oxide Cathode Buffer Layer in Fabricating High-Performance Polymer Light-Emitting Diodes

2008 ◽  
Vol 18 (19) ◽  
pp. 3036-3042 ◽  
Author(s):  
Tsung-Hsun Lee ◽  
Jung-Chun-Andrew Huang ◽  
Georgi L'vovich Pakhomov ◽  
Tzung-Fang Guo ◽  
Ten-Chin Wen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Oxide Cathode ◽  
High Performance Polymer ◽  
Polymer Light Emitting Diodes ◽  
Cathode Buffer Layer
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