Al2O3-Dielectric In0.18Al0.82N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure
2018 ◽
Vol 6
◽
pp. 68-73
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2020 ◽
Vol 8
◽
pp. 9-14
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2005 ◽
Vol 2
(7)
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pp. 2651-2654
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2001 ◽
Vol 188
(1)
◽
pp. 219-222
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2016 ◽
Vol 5
(12)
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pp. Q284-Q288
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