Reset Variability in Backfilled Resistive Random Access Memory and Its Correlation to Low Frequency Noise in Read

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2020.2988200 ◽

2020 ◽

Vol 8 ◽

pp. 465-473

Author(s):

Yun-Feng Kao ◽

Chrong Jung Lin ◽

Ya-Chin King

Keyword(s):

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Frequency Noise ◽

Low Frequency Noise ◽

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Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2240457 ◽

2013 ◽

Vol 60 (3) ◽

pp. 1272-1275 ◽

Author(s):

Z. Fang ◽

H. Y. Yu ◽

W. J. Fan ◽

G. Ghibaudo ◽

J. Buckley ◽

...

Keyword(s):

Noise Analysis ◽

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Frequency Noise ◽

Low Frequency Noise ◽

Access Memory ◽

Conduction Model ◽

Current Conduction

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Low-Frequency Noise in Oxide-Based $(\hbox{TiN}/ \hbox{HfO}_{x}/\hbox{Pt})$ Resistive Random Access Memory Cells

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2178245 ◽

2012 ◽

Vol 59 (3) ◽

pp. 850-853 ◽

Author(s):

Z. Fang ◽

H. Y. Yu ◽

J. A. Chroboczek ◽

G. Ghibaudo ◽

J. Buckley ◽

...

Keyword(s):

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Frequency Noise ◽

Memory Cells ◽

Low Frequency Noise ◽

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DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory

Microelectronic Engineering ◽

10.1016/j.mee.2013.02.076 ◽

2013 ◽

Vol 107 ◽

pp. 1-5 ◽

Author(s):

V. Maccaronio ◽

F. Crupi ◽

L.M. Procel ◽

L. Goux ◽

E. Simoen ◽

...

Keyword(s):

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Frequency Noise ◽

Low Frequency Noise ◽

Access Memory ◽

Conductive Filament

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Area Dependent Low Frequency Noise in Metal Oxide Based Resistive Random Access Memory

International Journal of Information and Electronics Engineering ◽

10.7763/ijiee.2012.v2.232 ◽

2012 ◽

Author(s):

Zheng Fang

Keyword(s):

Metal Oxide ◽

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Frequency Noise ◽

Low Frequency Noise ◽

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Characteristics of low frequency noise in n+Si-HfO2-Ni resistive random access memory

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021266 ◽

2014 ◽

Author(s):

Yadong Zhao ◽

Daming Huang ◽

Dongyi Lu ◽

Tran Xuan Anh ◽

Hongyu Yu ◽

...

Keyword(s):

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Frequency Noise ◽

Low Frequency Noise ◽

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Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement

IEEE Electron Device Letters ◽

10.1109/led.2021.3049655 ◽

2021 ◽

pp. 1-1

Author(s):

Tiancheng Gong ◽

Danian Dong ◽

Qing Luo ◽

Xiaoxin Xu ◽

Jianguo Yang ◽

...

Keyword(s):

Quantitative Analysis ◽

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Noise Measurement ◽

Frequency Noise ◽

Low Frequency Noise ◽

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Conduction investigation in oxide-based resistive random access memory with low frequency noise analysis

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632853 ◽

2012 ◽

Author(s):

Z. Fang ◽

X. P. Wang ◽

G. Q. Lo ◽

D. L. Kwong

Keyword(s):

Noise Analysis ◽

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Frequency Noise ◽

Low Frequency Noise ◽

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Conduction and Low-Frequency Noise Analysis in $ \hbox{Al}/\alpha\hbox{-TiO}_{X}/\hbox{Al}$ Bipolar Switching Resistance Random Access Memory Devices

IEEE Electron Device Letters ◽

10.1109/led.2010.2046010 ◽

2010 ◽

Vol 31 (6) ◽

pp. 603-605 ◽

Author(s):

Jung-Kyu Lee ◽

Hu Young Jeong ◽

In-Tak Cho ◽

Jeong Yong Lee ◽

Sung-Yool Choi ◽

...

Keyword(s):

Noise Analysis ◽

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Frequency Noise ◽

Memory Devices ◽

Low Frequency Noise ◽

Access Memory ◽

Bipolar Switching ◽

Resistance Random Access Memory

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Hydrogen-dependent low frequency noise and its physical mechanism of HfO2 resistance change random access memory

Applied Physics Letters ◽

10.1063/1.4997397 ◽

2017 ◽

Vol 111 (23) ◽

pp. 232104

Author(s):

Y. Q. Chen ◽

X. Liu ◽

Y. Liu ◽

C. Peng ◽

W. X. Fang ◽

...

Keyword(s):

Physical Mechanism ◽

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Frequency Noise ◽

Low Frequency Noise ◽

Access Memory ◽

Resistance Change

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Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.12(2).02008 ◽

2020 ◽

Vol 12 (2) ◽

pp. 02008-1-02008-4

Author(s):

Pramod J. Patil ◽

◽

Namita A. Ahir ◽

Suhas Yadav ◽

Chetan C. Revadekar ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Conductive Filament ◽

Filament Temperature

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